Method of forming multilayer film
First Claim
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1. A method of constructing a multilayer film, comprising:
- applying a second layer of nanometer-scale-thickness over a first layer covered in part by a mask having a first protrusion, the first protrusion effective to prohibit application of the second layer over a first contact region of the first layer and where the first protrusion is oriented a first application distance away from the first contact region so as to permit a shadow effect to occur while the second layer is being applied thereby causing the first contact region to have an area smaller than that of the first protrusion; and
applying a third layer over the applied second layer while the first protrusion is oriented at a second application distance away from the first contact region, where the second application distance is less than that of the first application distance and prohibits application of the third layer to the first contact region as well as a region of the applied second layer that at least partially surrounds the first contact region.
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Abstract
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
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Citations
28 Claims
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1. A method of constructing a multilayer film, comprising:
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applying a second layer of nanometer-scale-thickness over a first layer covered in part by a mask having a first protrusion, the first protrusion effective to prohibit application of the second layer over a first contact region of the first layer and where the first protrusion is oriented a first application distance away from the first contact region so as to permit a shadow effect to occur while the second layer is being applied thereby causing the first contact region to have an area smaller than that of the first protrusion; and applying a third layer over the applied second layer while the first protrusion is oriented at a second application distance away from the first contact region, where the second application distance is less than that of the first application distance and prohibits application of the third layer to the first contact region as well as a region of the applied second layer that at least partially surrounds the first contact region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 22)
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13. A method comprising:
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applying, over an underlying layer, a first nanometer-scale-thickness layer using a mask oriented at a first distance over the underlying layer and a first transverse location transverse to the underlying layer, the mask and its orientation effective to prohibit application of the first nanometer-scale-thickness layer over a portion of the underlying layer; applying, over the first nanometer-scale-thickness layer, a second nanometer-scale-thickness layer using the mask oriented at about the first transverse location and a second distance over the underlying layer, the second distance being less than the first distance, the mask and its orientation effective to prohibit contact between the second nanometer-scale-thickness layer and the portion of the underlying layer; and applying, over the second nanometer-scale-thickness layer, a third nanometer-scale-thickness layer using the mask oriented at a second transverse location and a third distance over the underlying layer, the third application distance being greater than the second application distance, the mask and its orientation effective to prohibit application of the third nanometer-scale-thickness layer over all of the portion of the underlying layer and over a portion of the second nanometer-scale-thickness layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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23. A method comprising:
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applying a first insulative material onto a first electrically conductive layer to form a second insulative layer through a first opening in a mask opposite a first region of the first layer, the mask being spaced from the first electrically conductive layer by a first distance; and applying a second electrically conductive material onto the second layer to form a third electrically conductive layer through the first opening in the mask opposite the region of the first electrically conductive layer, the mask being spaced from the second layer by a second distance less than the first distance; and applying a second insulative material onto the third electrically conductive layer through the first opening in the mask opposite the first region of the first electrically conductive layer and a second opening in the mask opposite a second region of the first electrically conductive layer, the mask being spaced from the third electrically conductive layer by a third distance greater than the second distance. - View Dependent Claims (24, 25, 26)
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27. A method comprising:
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forming a stack of alternating electrically conductive layers and insulative layers by applying different materials through openings of a mask; and adjusting an application distance of the mask to vary an extent to which the layers overlap one another so as to form openings extending into the stack to each electrically conductive layer. - View Dependent Claims (28)
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Specification