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Local multilayered metallization

  • US 7,375,026 B2
  • Filed: 08/31/2004
  • Issued: 05/20/2008
  • Est. Priority Date: 09/02/1999
  • Status: Expired due to Fees
First Claim
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1. A method for forming an interconnect comprising:

  • selecting an insulative surface;

    selecting a number of metallization stack layers having a critical thickness;

    etching a first trench on the insulative surface to a first depth greater than the critical thickness and a width less than a sidewall thickness of a first metallization stack, and the trench to couple a first memory cell to a second memory cell;

    etching a second trench on the insulative surface to a second depth greater than the critical thickness and a width greater than the sidewall thickness of the first metallization stack and less than a second sidewall thickness of a second metallization stack;

    depositing the first metal layer;

    depositing the second metal layer; and

    planarizing the insulative surface.

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