Device and a process for the calibration of a semiconductor component test system

• US 7,375,508 B2
• Filed: 06/28/2005
• Issued: 05/20/2008
• Est. Priority Date: 06/29/2004
• Status: Expired due to Fees

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Infineon Technologies AG
• Inventors: Bucksch, Thorsten
• Primary Examiner(s): TANG, MINH NHUT
• Application Number:
  US11/167,930
• Publication Number:
  US 20060005089A1
• Time in Patent Office: 1,057 Days
• Field of Search: None
• US Class Current: 324/750.02
• CPC Class Codes: G01R 1/07342 the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
• CPC Class Codes: G01R 31/3191 Calibration
• CPC Class Codes: G01R 35/005 Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references G01R33/0035, G01R35/002 take precedence
• CPC Class Codes: G11C 2029/5602 Interface to device under test
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/56 External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Abstract

A device and a process for the calibration of a semi-conductor component test system

The invention relates to a process and a device for the calibration of a probe card and/or of a semi-conductor component test apparatus including a first connection, at which a corresponding signal, in particular a calibration signal can be applied, and a second connection, connected or connectable with the first connection, at which the signal, in particular the calibration signal, can be emitted, and a third connection, at which a corresponding further signal, in particular a calibration signal, can be applied, and a fourth connection, connected or connectable with the third connection, at which the further signal, in particular the calibration signal, can be emitted.

Claims

1. A device for calibration of a probe card and/or of a semi-conductor component test apparatus, comprising:

a first connection, at which a calibration signal is applied;

a second connection, configured for connection with the first connection at which the calibration signal, is emitted;

a third connection, at which a further calibration signal, is applied; and

a fourth connection, configured for connection with the third connection, at which the further calibration signal is emitted;

wherein the device is configured such that, in a first setting of a probe card, a first contact of the probe card configured for connection with a reference driver channel contacts the first connection, and a second contact of the probe card configured for connection with a first comparator channel, contacts the second connection, and wherein the device is further configured such that, in a second setting of the probe card, the first contact of the probe card configured for connection with the reference driver channel, contacts the third connection, and a third contact of the probe card, configured for connection with a second comparator channel contacts the fourth connection.

2. The device according to claim 1, wherein the device is a wafer.

3. The device according to claim 2, in which the first connection and the second connection, and/or the third connection and the fourth connection are connected via one or several structures created on or in the wafer.

4. A system, comprising:

a device for calibration of a probe card and/or of a semi-conductor component test apparatus, comprising;

a first connection, at which a calibration signal is applied,

a second connection, configured for connection with the first connection at which the calibration signal, is emitted,

a third connection, at which a further calibration signal, is applied, and

a fourth connection, configured for connection with the third connection, at which the further calibration signal is emitted, wherein the device is a wafer and in which the first connection and the second connection, and/or the third connection and the fourth connection are connected via one or several structures created on or in the wafer; and

a probe card, wherein the device is configured such that, in a first setting of the probe card, a first contact of the probe card configured for connection with a reference driver channel contacts the first connection, and a second contact of the probe card configured for connection with a first comparator channel, contacts the second connection, and wherein the device is further configured such that, in a second setting of the probe card, the first contact of the probe card configured in connection with the reference driver channel, contacts the third connection, and the third contact of the probe card, configured for connection with a second comparator channel contacts the fourth connection.

5. The system according to claim 4, further comprising a semi-conductor component test apparatus connectable to the probe card.

6. A calibration system comprising:

a semi-conductor component test apparatus comprising;

one or more driver channels for emitting a calibration signal; and

one or more comparator channels for receiving the calibration signal;

a probe card connected with the driver channel, wherein the probe card includes;

a first contact configured for connection to the one or more drive channels; and

second and third contacts configured for connection to the one or more comparator channels;

a feedback device for feeding back the calibration signal via the probe card and the one or more comparator channels to the test apparatus, wherein the feedback device includes;

a first connection configured to receive the calibration signal;

a second connection configured to connect with the first connection and to emit the received calibration signal;

a third connection configured to receive a further calibration signal; and

a fourth connection configured to connect with the third connection and to emit the received further calibration signal, wherein the feedback device is configured such that, in a first setting of the probe card, the first contact of the probe card configured for connection with the one or more driver channels contacts the first connection, and the second contact of the probe card configured for connection with one of the one or more comparator channels, contacts the second connection, and wherein the feedback device is further configured such that, in a second setting of the probe card, the first contact of the probe card configured for connection with the one or more driver channels, contacts the third connection, and the third contact of the probe card, configured for connection with another one of the one or more second comparator channels contacts the fourth connection;

a signal delay device adapted to change a signal propagation time of the calibration signal through the one or more driver channels and the one or more comparator channels such that a point of time when the changed calibration signal is received at the first connection or the further calibration signal is received at the third connection corresponds to a predetermined time value.

7. The calibration system of claim 6 wherein the feedback device comprises a wafer.

8. The calibration system of claim 7 in which the first connection and the second connection, and/or the third connection and the fourth connection are connected via one or several structures created on or in the wafer.

9. The calibration system of claim 6 wherein the signal delay device is contained within the semi-conductor component test apparatus.