Versatile wafer refining
First Claim
1. A method of refining a first and a second layer of a semiconductor wafer, each having an effect on a cost of manufacture, the method comprising:
- applying a first refining energy to the first layer of the semiconductor wafer for a first layer refining;
sensing a real time process information for the first layer of the semiconductor wafer during the first layer refining with an at least one operative sensor for the first layer refining;
determining an improvement in real time for an at least one first layer control parameter “
A”
using a tracking code of the semiconductor wafer and the real time process information for the first layer of the semiconductor wafer with an operative control subsystem for the first layer refining;
controlling in real time the at least one first layer process control parameter “
A”
to change a first semiconductor wafer surface during the first layer refining of the first layer of the semiconductor wafer;
storing for future availability a stored information related to the at least one first layer process control parameter “
A”
, the tracking code of the semiconductor wafer, and the real time process information for the first layer of the semiconductor wafer;
applying a second refining energy to the second layer of the semiconductor wafer having an at least one second layer control parameter “
B”
for a second layer refining;
sensing a real time process information for the second layer of the semiconductor wafer during the second layer refining with an at least one operative sensor for the second layer refining;
determining an improvement in real time for the at least one second layer control parameter “
B”
using at least a portion of the stored information related to the tracking code of the semiconductor wafer, the real time process information for the first layer of the semiconductor wafer, and the real time process information for the second layer of the semiconductor wafer with an operative control subsystem for the second layer refining; and
controlling in real time the at least one second layer process control parameter “
B”
to change a second semiconductor wafer surface during the second layer refining of the second layer of the semiconductor wafer; and
using an at least one process model and using a predictive control during the method.
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Accused Products
Abstract
Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed. The new refining methods, including magnetic refining methods, apparatus, and refining elements, including magnetically responsive refining elements, can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductor wafers. New methods of control are also discussed. Methods and apparatus which use processor readable memory devices are discussed. Refining fluids are preferred. Reactive refining aids are preferred. Electro-refining for adding and removing material is disclosed. New methods and new apparatus for non-steady state refining control are disclosed.
96 Citations
61 Claims
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1. A method of refining a first and a second layer of a semiconductor wafer, each having an effect on a cost of manufacture, the method comprising:
-
applying a first refining energy to the first layer of the semiconductor wafer for a first layer refining; sensing a real time process information for the first layer of the semiconductor wafer during the first layer refining with an at least one operative sensor for the first layer refining; determining an improvement in real time for an at least one first layer control parameter “
A”
using a tracking code of the semiconductor wafer and the real time process information for the first layer of the semiconductor wafer with an operative control subsystem for the first layer refining;controlling in real time the at least one first layer process control parameter “
A”
to change a first semiconductor wafer surface during the first layer refining of the first layer of the semiconductor wafer;storing for future availability a stored information related to the at least one first layer process control parameter “
A”
, the tracking code of the semiconductor wafer, and the real time process information for the first layer of the semiconductor wafer;applying a second refining energy to the second layer of the semiconductor wafer having an at least one second layer control parameter “
B”
for a second layer refining;sensing a real time process information for the second layer of the semiconductor wafer during the second layer refining with an at least one operative sensor for the second layer refining; determining an improvement in real time for the at least one second layer control parameter “
B”
using at least a portion of the stored information related to the tracking code of the semiconductor wafer, the real time process information for the first layer of the semiconductor wafer, and the real time process information for the second layer of the semiconductor wafer with an operative control subsystem for the second layer refining; andcontrolling in real time the at least one second layer process control parameter “
B”
to change a second semiconductor wafer surface during the second layer refining of the second layer of the semiconductor wafer; andusing an at least one process model and using a predictive control during the method. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61)
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Specification