Systems and methods for producing light emitting diode array
First Claim
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1. A method for producing known good (light-emitting diode) LED structures, comprising:
- providing LED structures having a metal substrate deposited thereon, wherein the LED structures comprise multiple epitaxial layers;
evaluating said LED structures for defects including optical and electrical non-functionality compared to preset criteria; and
removing one or more defective LED structures by removing the multiple epitaxial layers of the defective LED structures such that the known good LED structures remain on the metal substrate.
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Abstract
Systems and methods are disclosed for producing vertical LED array on a metal substrate; evaluating said array of LEDs for defects; destroying one or more defective LEDs; forming good LEDs only LED array suitable for wafer level package.
62 Citations
20 Claims
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1. A method for producing known good (light-emitting diode) LED structures, comprising:
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providing LED structures having a metal substrate deposited thereon, wherein the LED structures comprise multiple epitaxial layers; evaluating said LED structures for defects including optical and electrical non-functionality compared to preset criteria; and removing one or more defective LED structures by removing the multiple epitaxial layers of the defective LED structures such that the known good LED structures remain on the metal substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for producing a known good (light-emitting diode) LED array, comprising:
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providing an array of LED structures, the array having a metal substrate deposited thereon, wherein the LED structures comprise multiple epitaxial layers; evaluating said array of LED structures for defects including optical and electrical non-functionality compared to a preset criteria; and removing one or more defective LED structures from the metal substrate by removing the multiple epitaxial layers of the defective LED structures. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a vertical (light-emitting diode) LED array on a metal substrate, comprising:
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providing a carrier substrate; depositing an n-GaN layer above the carrier substrate; depositing active layers above the n-GaN portion; depositing a p-GaN layer above the active layers; depositing one or more first metal layers above the p-GaN layer; applying a masking layer above the first metal layers; etching the first metal layers, the p-GaN layer, the active layers, and the n-GaN layer to define a plurality of LED structures; removing the masking layer; depositing a passivation layer; removing a portion of the passivation layer on top of the p-GaN layer to expose the first metal layers; depositing one or more second metal layers to form the metal substrate; removing the carrier substrate to expose a surface of the n-GaN layer; evaluating each of the LED structures for a defect using mapping; and removing one or more defective LED structures from the metal substrate by removing the n-GaN, active, and p-GaN layers of the defective LED structures. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification