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Multiple dielectric FinFET structure and method

DC
  • US 7,378,357 B2
  • Filed: 11/01/2005
  • Issued: 05/27/2008
  • Est. Priority Date: 03/18/2004
  • Status: Active Grant
First Claim
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1. A method of forming a fin-type field effect transistor (FinFET) structure, said method comprising:

  • patterning fins on a substrate;

    forming a first gate dielectric on said fins;

    protecting first fins using a mask;

    removing said first gate dielectric from unprotected second fins;

    removing said mask from said first fins; and

    forming an additional gate dielectric on said second fins and on said first gate dielectric that covers said first fins to form different thicknesses of gate dielectrics on said first fins when compared to said second fins.

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