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Migration enhanced epitaxy fabrication of quantum wells

  • US 7,378,680 B2
  • Filed: 08/31/2004
  • Issued: 05/27/2008
  • Est. Priority Date: 12/21/1998
  • Status: Expired due to Fees
First Claim
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1. A method for processing nitrogen-containing active regions associated with a semiconductor laser, said method comprising the steps of:

  • providing a substrate;

    developing a first confining region including mirror layers above said substrate;

    developing an active region including nitrogen containing layers interspersed nitrogen-free layers above said first confining region, wherein said nitrogen containing layers and said nitrogen-free layers are associated with at least one quantum well or at least one barrier layer, said developing an active region further comprising growing at least one nitrogen-free layer by alternately depositing single atomic layers of group III constituents and group V constituents without nitrogen being present, and growing at least one nitrogen containing layer on said at least one nitrogen-free layer; and

    developing a second confining region including mirror layers above said active region;

    wherein said step of alternately depositing single atomic layers of group III and group V constituents renders a nitrogen-free layer that is substantially flat and the at least one nitrogen-containing layer is grown on the substantially flat nitrogen-free layer, the nitrogen-containing layer comprising an amount of In and/or Sb that creates a compressive strain between the nitrogen-containing layer and the substantially flat nitrogen-free layer, without relaxation, thereby decreasing the band gap energy.

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