Migration enhanced epitaxy fabrication of quantum wells

• US 7,378,680 B2
• Filed: 08/31/2004
• Issued: 05/27/2008
• Est. Priority Date: 12/21/1998
• Status: Expired due to Fees

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Blasingame, Virgil J., Johnson, Ralph H.
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US10/931,194
• Publication Number:
  US 20050142683A1
• Time in Patent Office: 1,365 Days
• Field of Search: 438/29, 438/46, 438/47, 438/507, 257/11, 257/12, 257/21, 257/94, 372/45.01, 372/45.011
• US Class Current: 257/11
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01S 2302/00 Amplification / lasing wavelength
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/32358 containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
• CPC Class Codes: H01S 5/32366 (In)GaAs with small amount of N
• CPC Class Codes: H01S 5/34 comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence
• CPC Class Codes: H01S 5/3403 having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
• CPC Class Codes: H01S 5/3406 including strain compensation
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/34346 characterised by the materials of the barrier layers
• CPC Class Codes: H01S 5/34353 based on (AI)GaAs

Abstract

Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

Claims

1. A method for processing nitrogen-containing active regions associated with a semiconductor laser, said method comprising the steps of:

providing a substrate;

developing a first confining region including mirror layers above said substrate;

developing an active region including nitrogen containing layers interspersed nitrogen-free layers above said first confining region, wherein said nitrogen containing layers and said nitrogen-free layers are associated with at least one quantum well or at least one barrier layer, said developing an active region further comprising growing at least one nitrogen-free layer by alternately depositing single atomic layers of group III constituents and group V constituents without nitrogen being present, and growing at least one nitrogen containing layer on said at least one nitrogen-free layer; and

developing a second confining region including mirror layers above said active region;

wherein said step of alternately depositing single atomic layers of group III and group V constituents renders a nitrogen-free layer that is substantially flat and the at least one nitrogen-containing layer is grown on the substantially flat nitrogen-free layer, the nitrogen-containing layer comprising an amount of In and/or Sb that creates a compressive strain between the nitrogen-containing layer and the substantially flat nitrogen-free layer, without relaxation, thereby decreasing the band gap energy.

2. A method as defined in claim 1, wherein said group III and group V constituents comprise Ga and As respectively.

3. A method as defined in claim 1, wherein said at least one nitrogen containing layer is a quantum well.

4. A method as defined in claim 3, wherein said quantum well comprises GaAs and at least one of In, Sb and P.

5. A method as defined in claim 1, wherein said at least one nitrogen containing layer is a barrier layer.

6. A method as defined in claim 5, wherein said barrier layer comprises GaAs and at least one of In, Sb and P.

7. A method as defined in claim 1, wherein said at least one nitrogen-free layer is a quantum well.

8. A method as defined in claim 7, wherein said quantum well comprises GaAs and at least one of In, Sb and P.

9. A method as defined in claim 1, wherein said at least one nitrogen-free layer is a barrier layer.

10. A method as defined in claim 9, wherein said barrier layer comprises GaAs and at least one of In, Sb and P.

11. A method as defined in claim 1, wherein said step of alternately depositing single atomic layers of group III and group V constituents is repeated until at least one of a pre-selected time, temperature or number of alternating layers is achieved.

12. A method as defined in claim 1, wherein said step of alternately depositing single atomic layers of group III and group V constituents is conducted by alternately opening and closing Ga and As shutters associated with a fabrication system used in said method so that said Ga and As shutters are not both open at the same time.

13. A method as defined in claim 1, wherein said step of developing an active region further comprising growing at least one nitrogen-free layer by alternately depositing single atomic layers of group III constituents and group V constituents without nitrogen being present comprises the step of blocking any nitrogen source associated with a fabrication system used for said method.

14. A method as defined in claim 13, wherein said blocking any nitrogen source associated with said fabrication system is conducted by deploying a gate valve located along a nitrogen source line leading into said system.

15. The method of claim 1 further comprising the step of providing an arsenic beam equivalent pressure greater than about 1.1 e-5 torr during growth of said nitrogen-containing layers.

16. The method of claim 1 further comprising the step of providing an arsenic beam equivalent pressure greater than about 1.64 e-5 torr during growth of said nitrogen-containing layers.

17. The method of claim 1, wherein an arsenic flux is created during growth of nitrogen-containing layers and comprises predominantly As₄.

18. The method of claim 1, wherein one of the at least one single atomic layers of group III and group V constituents is developed directly above the first confining region.

19. The method of claim 1, wherein one of the at least one single atomic layers of group III and group V constituents is developed directly below one of the at least one quantum well.

20. The method of claim 1, wherein the substrate comprises GaAs.

21. The method of claim 1, wherein the at least one nitrogen-free layer is grown by alternately depositing single atomic layers of group III constituents and group V constituents without nitrogen being present using Migration Enhanced Epitaxy (MEE).

22. A method for processing nitrogen-containing active regions associated with a semiconductor laser, said method comprising the steps of:

providing a GaAs substrate;

developing a first confining region including mirror layers above said substrate;

developing an active region including nitrogen containing layers interspersed nitrogen-free layers above said first confining region, wherein said nitrogen containing layers and said nitrogen-free layers are associated with at least one quantum well or at least one barrier layer, said developing an active region further comprising growing at least one nitrogen-free layer by alternately depositing single atomic layers of Ga and As without nitrogen being present, and growing at least one nitrogen containing layer on said at least one nitrogen-free layer; and

developing a second confining region including mirror layers above said active region; and

wherein said step of alternately depositing single atomic layers of Ga and As constituents renders a nitrogen-free layer that is substantially flat and the at least one nitrogen-containing layer is grown on the substantially flat nitrogen-free layer, the nitrogen-containing layer comprising an amount of In and/or Sb that creates a compressive strain between the nitrogen-containing layer and the substantially flat nitrogen-free layer, without relaxation, thereby decreasing the band gap energy.

23. A method as defined in claim 22, wherein said step of developing an active region further comprising growing at least one nitrogen-free layer by alternately depositing single atomic layers of Ga and As without nitrogen being present comprises the step of blocking any nitrogen source associated with a fabrication system used for said method by deploying a gate valve located along a nitrogen source line leading into said system.

24. A laser diode, comprising:

a substrate;

a first confining region including mirror layers above said substrate;

an active region including nitrogen containing layers interspersed with nitrogen-free layers above said first confining region, wherein said nitrogen containing layers and said nitrogen-free layers are associated with at least one quantum well or at least one barrier layer, wherein at least one of the nitrogen free layers comprises single atomic layers of group III and group V constituents and is substantially flat and wherein one of the nitrogen-containing layers is disposed on the substantially flat nitrogen-free layer, the nitrogen-containing layer comprising an amount of In and/or Sb that creates a compressive strain between the nitrogen-containing layer and the substantially flat nitrogen-free layer, without relaxation, thereby decreasing the band gap energy; and

a second confining region including mirror layers above said active region.

25. The laser diode of claim 24, wherein the at least one quantum well or at least one barrier layer comprises at least one of In, Sb and P.

26. The laser diode of claim 24, wherein said group III and group V constituents comprise Ga and As respectively.

27. The laser diode of claim 24, wherein the single atomic layers of group III and group V constituents are of a pre-selected number of alternating layers, grown for a pre-selected amount of time, or of a pre-selected thickness.

28. The laser diode of claim 24, wherein an arsenic beam equivalent pressure greater than about 1.1 e-5 torr is provided during growth of said nitrogen-containing layers.

29. The laser diode of claim 24, wherein an arsenic beam equivalent pressure greater than about 1.64 e-5 torr during growth of said nitrogen-containing layers.

30. The laser diode of claim 24, wherein an arsenic flux is created during growth of nitrogen-containing layers and comprises predominantly As₄.

31. The laser diode of claim 24, wherein one of the at least one single atomic layers of group III and group V constituents is grown directly above the first confining region.

32. The laser diode of claim 31, wherein one of the at least one single atomic layers of group III and group V constituents is grown directly below one of the at least one quantum well.

33. The laser diode of claim 24, wherein the substrate comprises GaAs.

34. The laser diode of claim 24, wherein the at least one of the nitrogen free layers comprising single atomic layers of group III and group V constituents is produced using Migration Enhanced Epitaxy (MEE).