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Fuse element with adjustable resistance

  • US 7,378,718 B2
  • Filed: 03/29/2005
  • Issued: 05/27/2008
  • Est. Priority Date: 06/29/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first insulating film formed on a semiconductor substrate;

    a second insulating film formed on a region of the semiconductor substrate which is adjacent to the first insulating film, and being thinner than the first insulating film;

    a fuse element extending on the first insulating film and the second insulating film, and having a first region which serves as a fuse portion, a second region connected to one side of the first region, and a third region connected to another side of the first region;

    a first interlayer insulating film formed on the fuse element;

    at least one first contact plug extending through the first interlayer insulating film to the second region of the fuse element;

    at least one second contact plug extending through the interlayer insulating film to the third region of the fuse element;

    a first wiring formed on the first interlayer insulating film and connected to the at least one first contact plug;

    a second wiring formed on the first interlayer insulating film and connected to the at least one second contact plug; and

    wherein a pattern width of the first region is narrower than a pattern width of the second region and the third region,a pattern width of the second region is substantially equal to a pattern width of the third region, andthe entire second region is formed on the first insulating film, and at least a part of the third region is formed on the second insulating film.

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