Fuse element with adjustable resistance
First Claim
1. A semiconductor device, comprising:
- a first insulating film formed on a semiconductor substrate;
a second insulating film formed on a region of the semiconductor substrate which is adjacent to the first insulating film, and being thinner than the first insulating film;
a fuse element extending on the first insulating film and the second insulating film, and having a first region which serves as a fuse portion, a second region connected to one side of the first region, and a third region connected to another side of the first region;
a first interlayer insulating film formed on the fuse element;
at least one first contact plug extending through the first interlayer insulating film to the second region of the fuse element;
at least one second contact plug extending through the interlayer insulating film to the third region of the fuse element;
a first wiring formed on the first interlayer insulating film and connected to the at least one first contact plug;
a second wiring formed on the first interlayer insulating film and connected to the at least one second contact plug; and
wherein a pattern width of the first region is narrower than a pattern width of the second region and the third region,a pattern width of the second region is substantially equal to a pattern width of the third region, andthe entire second region is formed on the first insulating film, and at least a part of the third region is formed on the second insulating film.
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Accused Products
Abstract
A fuse element has a first region, a second region and a third region. The first region is a portion for isolating circuitry. The second region and the third region are respectively connected to both ends of the first region and have a wider pattern width than that of the first region. The second region, the first region and a part of the third region of the fuse element are formed on a thick insulating film, while the remaining part of the third region is formed on a thin insulating film. Heat generated in the fuse element is less likely to be released to a semiconductor substrate through the thick insulating film, but is more likely to be released to the semiconductor substrate through the thin insulating film. The fuse element therefore has a large temperature change and a large temperature gradient. This facilitates electrical blowing of the first region.
37 Citations
9 Claims
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1. A semiconductor device, comprising:
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a first insulating film formed on a semiconductor substrate; a second insulating film formed on a region of the semiconductor substrate which is adjacent to the first insulating film, and being thinner than the first insulating film; a fuse element extending on the first insulating film and the second insulating film, and having a first region which serves as a fuse portion, a second region connected to one side of the first region, and a third region connected to another side of the first region; a first interlayer insulating film formed on the fuse element; at least one first contact plug extending through the first interlayer insulating film to the second region of the fuse element; at least one second contact plug extending through the interlayer insulating film to the third region of the fuse element; a first wiring formed on the first interlayer insulating film and connected to the at least one first contact plug; a second wiring formed on the first interlayer insulating film and connected to the at least one second contact plug; and wherein a pattern width of the first region is narrower than a pattern width of the second region and the third region, a pattern width of the second region is substantially equal to a pattern width of the third region, and the entire second region is formed on the first insulating film, and at least a part of the third region is formed on the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification