Integrated stress relief pattern and registration structure
First Claim
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1. A semiconductor die having an integrated circuit region formed in a substrate comprising:
- at least one die-corner-circuit-forbidden (DCCF) region disposed in the substrate proximate to the integrated circuit region; and
at least one registration feature formed within the at least one DCCF region, wherein the registration feature comprises a first material and a second material different than the first material, and wherein the second material surrounds the first material.
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Abstract
A semiconductor die having an integrated circuit region formed in a substrate comprises at least one die-corner-circuit-forbidden (DCCF) region disposed in the substrate, proximate to the integrated circuit region; and at least one registration feature formed within the at least one DCCF region. The at least one registration feature comprises a structure selected from the group consisting of a laser fuse mark, an alignment mark, and a monitor mark.
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Citations
11 Claims
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1. A semiconductor die having an integrated circuit region formed in a substrate comprising:
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at least one die-corner-circuit-forbidden (DCCF) region disposed in the substrate proximate to the integrated circuit region; and at least one registration feature formed within the at least one DCCF region, wherein the registration feature comprises a first material and a second material different than the first material, and wherein the second material surrounds the first material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification