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Integrated stress relief pattern and registration structure

  • US 7,378,720 B2
  • Filed: 04/03/2007
  • Issued: 05/27/2008
  • Est. Priority Date: 06/01/2004
  • Status: Active Grant
First Claim
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1. A semiconductor die having an integrated circuit region formed in a substrate comprising:

  • at least one die-corner-circuit-forbidden (DCCF) region disposed in the substrate proximate to the integrated circuit region; and

    at least one registration feature formed within the at least one DCCF region, wherein the registration feature comprises a first material and a second material different than the first material, and wherein the second material surrounds the first material.

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