Structures and methods to enhance copper metallization

• US 7,378,737 B2
• Filed: 07/16/2002
• Issued: 05/27/2008
• Est. Priority Date: 01/18/2000
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Farrar, Paul A.
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US10/196,081
• Publication Number:
  US 20020182859A1
• Time in Patent Office: 2,142 Days
• Field of Search: 438/687, 438/622, 438/635, 438/653, 438/627, 438/670
• US Class Current: 257/758
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76823 transforming an insulating layer into a conductive layer
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76859 by ion implantation
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76874 for electroless plating
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 21/7688 by deposition over sacrificial masking layer, e.g. lift-off lift-off per se H01L21/0272
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.

Claims

1. A semiconductor structure comprising:

a protective layer that comprises an insulator nitride compound;

a first insulator layer abutting the protective layer;

at least one contact plug through the protective layer and the first insulator layer, wherein the contact plug comprises first and second contact materials, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;

a second insulator layer that comprises polyimide;

an inhibiting layer on the second insulator layer having a compound including zirconium and polyimide;

a copper seed layer on the inhibiting layer; and

a copper metallization layer electroplated on the copper seed layer.

2. The semiconductor structure of claim 1, wherein the protective layer includes a nitride compound that comprises silicon nitride, wherein silicon nitride includes trisilicon tetranitride.

3. The semiconductor structure of claim 2, wherein the protective layer has a thickness of about 100 nanometers.

4. The semiconductor structure of claim 1, wherein the protective layer is on the first insulator layer.

5. The semiconductor structure of claim 1, wherein the first insulator layer is on the protective layer.

6. The semiconductor structure of claim 1, wherein the first insulator layer includes a material selected from a group consisting of a polymer and a foamed polymer, wherein the polymer comprises a polyimide.

12. The semiconductor structure of claim 1, wherein the copper metallization layer does not include a copper alloy.

7. A semiconductor structure comprising:

a protective layer that comprises an insulator nitride compound;

a first insulator layer abutting the protective layer;

at least one contact plug through the protective layer and the first insulator layer, wherein the contact plug comprises first and second contact materials, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;

a second insulator layer, wherein the second insulator layer includes a substance with a first predetermined thickness, and wherein the substance comprises an insulator oxide compound;

an inhibiting layer on the second insulator layer and including a compound that comprises aluminum and the insulator oxide compound; and

a copper metallization layer on the inhibiting layer.

8. The semiconductor structure of claim 7, wherein the protective layer includes a nitride compound that comprises silicon nitride, wherein silicon nitride includes trisilicon tetranitride.

9. The semiconductor structure of claim 8, wherein the protective layer has a thickness of about 100 nanometers.

10. The semiconductor structure of claim 7, wherein the protective layer is on the first insulator layer.

11. The semiconductor structure of claim 7, wherein the first insulator layer is on the protective layer.

13. The semiconductor structure of claim 7, wherein the copper metallization layer does not include a copper alloy.

14. A semiconductor structure comprising:

a protective layer;

a first insulator structure overlying and contacting the protective layer;

a copper structure contacting the first insulator structure and overlying a portion of the protective layer;

at least one contact extending through the protective layer and electrically coupled to the copper structure;

a second insulator structure overlying the portion of the protective layer and comprising a polyimide; and

an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including zirconium and a polyimide.

15. The semiconductor structure of claim 14, wherein the protective layer consists essentially of an insulator nitride compound, and the first and second insulator structures consists essentially of the polyimide.

16. The semiconductor structure of claim 14, wherein the at least one contact includes a layer of titanium nitride and a layer of tungsten.

17. The semiconductor structure of claim 14, wherein the protective layer comprises trisilicon tetranitride.

18. The semiconductor structure of claim 14, wherein the protective layer overlies at least one active device and the contact plug is electrically coupled to the at least one device.

19. The semiconductor structure of claim 14, wherein the protective layer has a thickness of about 100 nanometers.

20. The semiconductor structure of claim 14, wherein the copper structure does not include a copper alloy.

21. A semiconductor structure comprising:

a protective layer;

a first insulator structure overlying and contacting the protective layer;

a copper structure contacting the first insulator structure and overlying a portion of the protective layer;

at least one contact extending through the protective layer and electrically coupled to the copper structure;

a second insulator structure overlying the portion of the protective layer and comprising an insulator oxide compound; and

an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound that comprises aluminum and the insulator oxide compound.

22. The semiconductor structure of claim 21, wherein the protective layer consists essentially of an insulator nitride compound, and the first and second insulator structures consists essentially of the insulator oxide compound.

23. The semiconductor structure of claim 21, wherein the at least one contact includes a layer of titanium nitride and a layer of tungsten.

24. The semiconductor structure of claim 21, wherein the protective layer comprises a silicon nitride.

25. The semiconductor structure of claim 21, wherein the protective layer overlies at least one active device and the contact plug is electrically coupled to the at least one device.

26. The semiconductor structure of claim 21, wherein the copper structure does not include a copper alloy.

28. The semiconductor structure of claim 21, wherein the protective layer consists essentially of an insulator nitride compound, and the first and second insulator structures consists essentially of the first substance.

29. The semiconductor structure of claim 21, wherein the at least one contact plug includes a layer of titanium nitride and a layer of tungsten.

30. The semiconductor structure of claim 21, wherein the copper structure does not include a copper alloy.

27. A semiconductor structure comprising:

a protective layer overlying at least one active device;

a first insulator structure overlying and contacting the protective layer;

a copper structure contacting the first insulator structure and overlying a portion of the protective layer;

at least one contact extending through the protective layer and electrically coupled to the at least one active device and the copper structure;

a second insulator structure overlying the portion of the protective layer and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and

an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including one or more elements of the first substance and one or more elements of a second substance selected from a group consisting of chromium, molybdenum, zirconium, hafnium, vanadium, niobium, aluminum, magnesium, and boron.

31. A semiconductor structure comprising:

a protective layer overlying at least first and second active devices;

a first insulator structure overlying and contacting the protective layer;

first and second conductive members extending through the protective layer and respectively electrically coupled to the first and second active devices;

a copper structure contacting the first insulator structure, overlying at least a portion of the protective layer between the first and second contacts, and electrically coupled to the first and second contacts;

a second insulator structure overlying the portion of the protective layer between the first and second conductive members and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and

an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including one or more elements of the first substance and one or more elements of a second substance selected from a group consisting of chromium, molybdenum, zirconium, haihium, vanadium, niobium, aluminum, magnesium, and boron.

32. The semiconductor structure of claim 31, wherein the protective layer consists essentially of an insulator nitride compound, and the first and second insulator structures consists essentially of the first substance.

33. The semiconductor structure of claim 31, wherein each of the conductive members includes a layer of titanium nitride and a layer of tungsten.

34. The semiconductor structure of claim 31, wherein the copper structure does not include a copper alloy.

35. A semiconductor structure comprising:

a protective layer overlying at least first and second active devices;

a first insulator structure overlying and contacting the protective layer;

first and second conductive members extending through the protective layer and respectively electrically coupled to the first and second active devices;

a structure consisting essentially of copper, contacting the first insulator structure, overlying at least a portion of the protective layer between the first and second conductive members, and electrically coupled to the first and second contacts;

a second insulator structure overlying the portion of the protective layer between the first and second conductive members and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and

means for inhibiting atom migration between the second insulator structure and the structure.

36. The semiconductor structure of claim 35, wherein the protective layer consists essentially of an insulator nitride compound, and the first and second insulator structures consists essentially of the first substance.

37. The semiconductor structure of claim 35, wherein the means for inhibiting layer comprises a compound including one or more elements of the first substance and one or more elements of a second substance selected from a group consisting of chromium, molybdenum, zirconium, hafnium, vanadium, niobium, aluminum, magnesium, and boron.