Structures and methods to enhance copper metallization
First Claim
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1. A semiconductor structure comprising:
- a protective layer that comprises an insulator nitride compound;
a first insulator layer abutting the protective layer;
at least one contact plug through the protective layer and the first insulator layer, wherein the contact plug comprises first and second contact materials, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;
a second insulator layer that comprises polyimide;
an inhibiting layer on the second insulator layer having a compound including zirconium and polyimide;
a copper seed layer on the inhibiting layer; and
a copper metallization layer electroplated on the copper seed layer.
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Abstract
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.
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Citations
37 Claims
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1. A semiconductor structure comprising:
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a protective layer that comprises an insulator nitride compound; a first insulator layer abutting the protective layer; at least one contact plug through the protective layer and the first insulator layer, wherein the contact plug comprises first and second contact materials, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten; a second insulator layer that comprises polyimide; an inhibiting layer on the second insulator layer having a compound including zirconium and polyimide; a copper seed layer on the inhibiting layer; and a copper metallization layer electroplated on the copper seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 12)
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7. A semiconductor structure comprising:
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a protective layer that comprises an insulator nitride compound; a first insulator layer abutting the protective layer; at least one contact plug through the protective layer and the first insulator layer, wherein the contact plug comprises first and second contact materials, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten; a second insulator layer, wherein the second insulator layer includes a substance with a first predetermined thickness, and wherein the substance comprises an insulator oxide compound; an inhibiting layer on the second insulator layer and including a compound that comprises aluminum and the insulator oxide compound; and a copper metallization layer on the inhibiting layer. - View Dependent Claims (8, 9, 10, 11, 13)
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14. A semiconductor structure comprising:
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a protective layer; a first insulator structure overlying and contacting the protective layer; a copper structure contacting the first insulator structure and overlying a portion of the protective layer; at least one contact extending through the protective layer and electrically coupled to the copper structure; a second insulator structure overlying the portion of the protective layer and comprising a polyimide; and an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including zirconium and a polyimide. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor structure comprising:
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a protective layer; a first insulator structure overlying and contacting the protective layer; a copper structure contacting the first insulator structure and overlying a portion of the protective layer; at least one contact extending through the protective layer and electrically coupled to the copper structure; a second insulator structure overlying the portion of the protective layer and comprising an insulator oxide compound; and an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound that comprises aluminum and the insulator oxide compound. - View Dependent Claims (22, 23, 24, 25, 26, 28, 29, 30)
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27. A semiconductor structure comprising:
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a protective layer overlying at least one active device; a first insulator structure overlying and contacting the protective layer; a copper structure contacting the first insulator structure and overlying a portion of the protective layer; at least one contact extending through the protective layer and electrically coupled to the at least one active device and the copper structure; a second insulator structure overlying the portion of the protective layer and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including one or more elements of the first substance and one or more elements of a second substance selected from a group consisting of chromium, molybdenum, zirconium, hafnium, vanadium, niobium, aluminum, magnesium, and boron.
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31. A semiconductor structure comprising:
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a protective layer overlying at least first and second active devices; a first insulator structure overlying and contacting the protective layer; first and second conductive members extending through the protective layer and respectively electrically coupled to the first and second active devices; a copper structure contacting the first insulator structure, overlying at least a portion of the protective layer between the first and second contacts, and electrically coupled to the first and second contacts; a second insulator structure overlying the portion of the protective layer between the first and second conductive members and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and an inhibiting layer between the second insulator structure and the copper structure, wherein the inhibiting layer comprises a compound including one or more elements of the first substance and one or more elements of a second substance selected from a group consisting of chromium, molybdenum, zirconium, haihium, vanadium, niobium, aluminum, magnesium, and boron. - View Dependent Claims (32, 33, 34)
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35. A semiconductor structure comprising:
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a protective layer overlying at least first and second active devices; a first insulator structure overlying and contacting the protective layer; first and second conductive members extending through the protective layer and respectively electrically coupled to the first and second active devices; a structure consisting essentially of copper, contacting the first insulator structure, overlying at least a portion of the protective layer between the first and second conductive members, and electrically coupled to the first and second contacts; a second insulator structure overlying the portion of the protective layer between the first and second conductive members and comprising a first substance selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound; and means for inhibiting atom migration between the second insulator structure and the structure. - View Dependent Claims (36, 37)
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Specification