Apparatus and methods for detecting overlay errors using scatterometry

• US 7,379,183 B2
• Filed: 02/23/2004
• Issued: 05/27/2008
• Est. Priority Date: 02/22/2003
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Levy, Ady, Friedmann, Michael, Smith, Ian, Adel, Michael E., Mieher, Walter D., Fielden, John, Golovanesky, Boris, Ghinovker, Mark, Bareket, Noah, Bevis, Christopher F., Dececco, Paola, Gross, Kenneth P.
• Primary Examiner(s): Lauchman; Layla G.
• Assistant Examiner(s): Stock, Jr.; Gordon J.
• Application Number:
  US10/785,731
• Publication Number:
  US 20040233442A1
• Time in Patent Office: 1,555 Days
• Field of Search: None
• US Class Current: 356/401
• CPC Class Codes: G01N 2021/213 Spectrometric ellipsometry
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/70683 Mark designs
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Abstract

Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.

Claims

1. A method of determining an overlay error between two layers of a multiple layer sample, the method comprising:

for a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, employing an optical system to thereby measure an optical signal from each of the periodic targets, wherein there are predefined offsets between the first and second structures; and

determining and storing an overlay error between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets,

wherein the scatterometry overlay technique is a phase based technique that includes representing each of the measured optical signals as a set of periodic functions having a plurality of known parameters and a plurality of unknown parameters that include an unknown overlay error parameter and analyzing the set of periodic functions to solve for the unknown overlay error parameter to thereby determine the overlay error, wherein the number of targets equals the number of unknown parameters,

wherein the optical system comprises any one or more of the following apparatus;

an imaging reflectometer, an imaging spectroscopic reflectometer, a polarized spectroscopic imaging reflectometer, a scanning reflectometer system, a system with two or more reflectometers capable of parallel data acquisition, a system with two or more spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the reflectometer stage, imaging spectrometers, imaging system with wavelength filter, imaging system with long-pass wavelength filter, imaging system with short-pass wavelength filter, imaging system without wavelength filter, interferometric imaging system, imaging ellipsometer, a spectroscopic ellipsometer, a laser ellipsometer having a photoelastic modulator, an imaging spectroscopic ellipsometer, a scanning ellipsometer system, a system with two or more ellipsometers capable of parallel data acquisition, a system with two or more ellipsometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the ellipsometer stage, a Michelson interferometer, and a Mach-Zehnder interferometer, a Sagnac interferometer, a scanning angle of incidence system, a scanning azimuth angle system, a +/−

first order differential reflectometer, and/or a +/−

first order differential polarized reflectometer.

2. A method as recited in claim 1, wherein the optical system is a +/−

first order differential reflectometer.

3. A method as recited in claim 1, wherein the optical system is a +/−

first order differential polarized reflectometer.

4. A method as recited in claim 1, wherein each first structure has a first center of symmetry and each second structure has a second center of symmetry and wherein the first center of symmetry and the second center of symmetry for each target are offset with respect to each other by a selected one of the predefined offsets.

5. A method as recited in claim 1, wherein the overlay error is determined without comparing the measured optical signals to calibration data.

6. A method as recited in claim 1, wherein the optical system is an imaging reflectometer.

7. A method as recited in claim 1, wherein the optical system is an imaging spectroscopic reflectometer.

8. A method as recited in claim 1, wherein the optical system is a scanning reflectometer system.

9. A method as recited in claim 1, wherein the optical system is a system with two or more reflectometers capable of parallel data acquisition.

10. A method as recited in claim 1, wherein the optical system is a system with two or more spectroscopic reflectometers capable of parallel data acquisition.

11. A method as recited in claim 1, wherein the optical system is a system with two or more polarized spectroscopic reflectometers capable of parallel data acquisition.

12. A method as recited in claim 1, wherein the optical system is a system with two or more polarized spectroscopic reflectometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the reflectometer stage.

13. A method as recited in claim 1, herein the optical system is an imaging spectrometer.

14. A method as recited in claim 1, wherein the optical system is an imaging system with a wavelength filter.

15. A method as recited in claim 1, wherein the optical system is an interferometric imaging system.

16. A method as recited in claim 1, wherein the optical system is an imaging ellipsometer.

17. A method as recited in claim 1, wherein the optical system is an imaging spectroscopic ellipsometer.

18. A method as recited in claim 1, wherein the optical system is a scanning ellipsometer system.

19. A method as recited in claim 1, wherein the optical system is a system with two or more ellipsometers capable of parallel data acquisition.

20. A method as recited in claim 1, wherein the optical system is a system with two or more ellipsometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the ellipsometer stage.

21. A method as recited in claim 1, wherein the optical system is a Michelson interferometer.

22. A method as recited in claim 1, wherein the optical system is a Mach-Zehnder interferometer.

23. A method as recited in claim 1, wherein the optical system is a Sagnac interferometer.

24. A method as recited in claim 1, wherein the optical system is a scanning angle of incidence system.

25. A method as recited in claim 1, wherein the optical system is a scanning azimuthal angle system.

26. A method as recited in claim 1, wherein the predefined offsets include a +/−

F constant and a +/−

f0 constant, wherein the F constant equals ½

of a pitch of the targets and f0 constant is outside a region of interest for the determined overlay error and does not cause the uncertainty of the determined overlay error to allow an out-of-specification overlay error to be determined as an in-specification overlay error.

27. A method as recited in claim 1, wherein the optical system is a spectroscopic ellipsometer.

28. A method as recited in claim 1, wherein the optical system is a laser ellipsometer having a photoelastic modulator.

29. A method as recited in claim 1, wherein the number of terms in each set of periodic functions is three and the number of targets is four.

30. A method as recited in claim 27, wherein the spectroscopic ellipsometer comprises at least one reflective focusing element.

31. A method as recited in claim 27, wherein the spectroscopic ellipsometer comprises at least one reflective collection element.

32. A method as recited in claim 28, wherein each first structure has a first center of symmetry and each second structure has a second center of symmetry and wherein the first center of symmetry and the second center of symmetry for each target are offset with respect to each other by a selected one of the predefined offsets.

33. A method as recited in claim 29, wherein the predefined offsets can be represented as Xa, Xb, Xc, and Xd so as to meet the following condition:

Xa−

Xc=Xc−

Xb=Xb−

Xd=Xd−

Xa+P=P/4, wherein P is a pitch of each of the four targets.

34. A method of determining an overlay error between two layers of a multiple layer sample, the method comprising:

for a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, employing an optical system to thereby measure an optical signal from each of the periodic targets, wherein there are predefined offsets between the first and second structures; and

determining an overlay error between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets,

wherein the optical system is a polarized spectroscopic imaging reflectometer.

35. A method for determining an overlay error between at least two layers in a multiple layer sample, the method comprising:

providing a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer, wherein there are predefined offsets between the first and second structures;

adjusting a polarization modulator of an ellipsometer to a plurality of different polarization states;

measuring a plurality of measured signals from the periodic targets for each different polarization state; and

using a scatterometry overlay technique to analyze the measured signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine and store an overlay error between the first and second structures of the periodic targets,

wherein, the scatterometry overlay technique is a phase based technique that includes representing each of the measured signals, that was measured for each different polarization state and periodic target, as a set of periodic functions having a plurality of known parameters and a plurality of unknown parameters that include an unknown overlay error parameter and analyzing the set of periodic functions to solve for the unknown overlay error parameter to thereby determine the overlay error, wherein the number of targets equals the number of unknown parameters.

36. A method as recited in claim 35, wherein the polarization modulator is a photoelastic modulator (PEM).

37. A method as recited in claim 35, wherein the ellipsometer includes a polarizer in an incident path and an analyzer in an output path, wherein the polarization modulator is contained in the polarizer.

38. A method as recited in claim 35, wherein the ellipsometer includes a polarizer in an incident path and an analyzer in an output path, wherein the polarization modulator is contained in the analyzer.

39. A method as recited in claim 35, wherein the ellipsometer includes a polarizer in an incident path and an analyzer in an output path, wherein the polarization modulator is contained in both the polarizer and the analyzer.

40. A method as recited in claim 35, wherein each first structure has a first center of symmetry and each second structure has a second center of symmetry and wherein the first center of symmetry and the second center of symmetry for each target are offset with respect to each other by a selected one of the predefined offsets.

41. A method as recited in claim 35, wherein the overlay error is determined without comparing the measured optical signals to calibration data.

42. A method as recited in claim 35, wherein the number of terms in each set of periodic functions is three and the number of targets is four.

43. A method as recited in claim 35, wherein the predefined offsets include a +/−

F constant and a +/−

f0 constant, wherein the F constant equals ½

of a pitch of the targets and f0 constant is outside a region of interest for the determined overlay error and does not cause the uncertainty of the determined overlay error to allow an out-of specification overlay error to be determined as an in-specification overlay error.

44. A method as recited in claim 42, wherein the predefined offsets can be represented as Xa, Xb, Xc, and Xd so as to meet the following condition:

Xa−

Xc=Xc−

Xb=Xb−

Xd=Xd−

Xa+P=P/4, wherein P is a pitch of each of the four targets.