Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance

• US 7,379,278 B2
• Filed: 04/07/2006
• Issued: 05/27/2008
• Est. Priority Date: 03/28/2002
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takagishi, Masayuki, Sakakubo, Takeo, Yoshikawa, Masatoshi, Sahashi, Masashi, Koui, Katsuhiko, Iwasaki, Hitoshi
• Primary Examiner(s): EVANS, JEFFERSON A
• Application Number:
  US11/399,449
• Publication Number:
  US 20060181814A1
• Time in Patent Office: 781 Days
• Field of Search: 360/324.1, 360/324.12, 360/324.2, 360/322, 360/324.11
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

Claims

1. A magnetoresistance effect element comprising:

a substrate electrode;

an upper electrode;

a magnetically free layer provided between the substrate electrode and the upper electrode, a direction of magnetization of the free layer changing in response to an external magnetic field;

a nonmagnetic intermediate layer having a first layer provided between the free layer and the upper electrode, and a second layer provided between the first layer and the upper electrode, the first layer including a non-magnetic metal in a concentration below 10%, the second layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low; and

a magnetically pinned layer provided between the intermediate layer and the upper electrode, a direction of magnetization of the pinned layer being pinned substantially in one direction,

an ohmic characteristic being obtained when the sense current passes the first layer.

2. The magnetoresistance effect element according to claim 1, wherein a thickness of the first layer is 0.25 nm or less.

3. The magnetoresistance effect element according to claim 1, wherein, a composition of the nonmagnetic intermediate layer changes continuously at a boundary between the first and second regions.

4. The magnetoresistance effect element according to claim 1, wherein the second layer includes an oxide of an element selected from the group consisting of boron (B), silicon (Si), germanium (Ge), tantalum (Ta), tungsten (W), niobium (Nb), aluminum (Al), molybdenum (Mo), phosphorous (P), vanadium (V), arsenic (As), antimony (Sb), zirconium (Zr), titanium (Ti), zinc (Zn), lead (Pb), thorium (Th), beryllium (Be), cadmium (Cd), scandium (Sc), lanthanum (La), yttrium (Y), praseodymium (Pr), chromium (Cr), tin (Sn), gallium (Ga), indium (In), rhodium (Rh), palladium (Pd), magnesium (Mg), lithium (Li), barium (Ba), calcium (Ca), strontium (Sr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), rubidium (Rb), and rare earth metals, as its main component.

5. The magnetoresistance effect element according to claim 1, wherein the second layer includes an element selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os), in a range from 1 atomic % to 50 atomic %.

6. The magnetoresistance effect element according to claim 1, wherein the second layer is substantially crystalline.

7. The magnetoresistance effect element according to claim 1, wherein the second layer includes a oxide of a element selected from the group consisting of boron (B), silicon (Si), germanium (Ge), tungsten (W), niobium (Nb), molybdenum (Mo), phosphorous (P), vanadium (V), antimony (Sb), zirconium (Zr), titanium (Ti), zinc (Zn), lead (Pb), chromium (Cr), tin (Sn), gallium (Ga), iron (Fe), cobalt (Co), and rare earth metals, and further includes an element selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os), in a range from 1 atomic % to 50 atomic %.

8. The magnetoresistance effect element according to claim 1, wherein the non-magnetic metal is selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os).

9. The magnetoresistance effect element according to claim 1, wherein the second regions are substantially uniformly distributed in the second layer.

10. A magnetic head comprising a magnetoresistance effect element having:

a substrate electrode;

an upper electrode;

a magnetically free layer provided between the substrate electrode and the upper electrode, a direction of magnetization of the free layer changing in response to an external magnetic field;

a nonmagnetic intermediate layer having a first layer provided between the free layer and the upper electrode, and a second layer provided between the first layer and the upper electrode, the first layer including a non-magnetic metal, the second layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low; and

a magnetically pinned layer provided between the intermediate layer and the upper electrode, a direction of magnetization of the pinned layer being pinned substantially in one direction,

an ohmic characteristic being obtained when the sense current passes the first layer, and

a composition of the nonmagnetic intermediate layer changing continuously at a boundary between the first and second regions.

11. A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium,

the magnetic reproducing apparatus comprising a magnetic head having a magnetoresistance effect element including:

a substrate electrode;

an upper electrode,

a magnetically free layer provided between the substrate electrode and the upper electrode, a direction of magnetization of the free layer changing in response to an external magnetic field;

a nonmagnetic intermediate layer having a first layer provided between the free layer and the upper electrode, and a second layer provided between the first layer and the upper electrode, the first layer including a non-magnetic metal, the second layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low; and

a magnetically pinned layer provided between the intermediate layer and the upper electrode, a direction of magnetization of the pinned layer being pinned substantially in one direction,

an ohmic characteristic being obtained when the sense current passes the first layer, and

a composition of the nonmagnetic intermediate layer changing continuously at a boundary between the first and second regions.

12. A magnetic memory comprising a plurality of magnetoresistance effect elements arranged in a matrix fashion,

the magnetoresistance effect element including:

a substrate electrode;

an upper electrode,

a magnetically free layer provided between the substrate electrode and the upper electrode, a direction of magnetization of the free layer changing in response to an external magnetic field;

a nonmagnetic intermediate layer having a first layer prodded between the free layer and the upper electrode and a second layer provided between the first layer and the upper electrode, the first layer including a non-magnetic metal, the second layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low; and

a magnetically pinned layer provided between the intermediate layer and the upper electrode, a direction of magnetization of the pinned layer being pinned substantially in one direction,

an ohmic characteristic being obtained when the sense current passes the first layer, and

a composition of the nonmagnetic intermediate layer changing continuously at a boundary between the first and second regions.

13. A magnetoresistance effect element comprising:

a substrate electrode;

an upper electrode;

a magnetically free layer provided between the substrate electrode and the upper electrode, a direction of magnetization of the free layer changing in response to an external magnetic field;

a nonmagnetic intermediate layer having a first layer provided between the free layer and the upper electrode, and a second layer provided between the first layer and the upper electrode, the first layer including a non-magnetic metal, the second layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low; and

a magnetically pinned layer provided between the intermediate layer and the upper electrode, a direction of magnetization of the pinned layer being pinned substantially in on direction,

an ohmic characteristic being obtained when the sense current passes the first layer, and

a composition of the nonmagnetic intermediate layer changing continuously at a boundary between the first and second regions.

14. The magnetoresistance effect element according to claim 13, wherein a thickness of the first layer is 0.25 nm or less.

15. The magnetoresistance effect element according to claim 13, wherein the second layer includes an oxide of an element selected from the group consisting of boron (B), silicon (Si), germanium (Ge), tantalum (Ta), tungsten (W), niobium (Nb), aluminum (Al), molybdenum (Mo), phosphorous (P), vanadium (V), arsenic (As), antimony (Sb), zirconium (Zr), titanium (Ti), zinc (Zn), lead (Pb), thorium (Th), beryllium (Be), cadmium (Cd), scandium (Sc), lanthanum (La), yttrium (Y), praseodymium (Pr), chromium (Cr), tin (Sn), gallium (Ga), indium (In), rhodium (Rh), palladium (Pd), magnesium (Mg), lithium (Li), barium (Ba), calcium (Ca), strontium (Sr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), rubidium (Rb), and rare earth metals, as its main component.

16. The magnetoresistance effect element according to claim 13, wherein the second layer includes an element selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os), in a range from 1 atomic % to 50 atomic %.

17. The magnetoresistance effect element according to claim 13, wherein the second layer is substantially crystalline.

18. The magnetoresistance effect element according to claim 13, wherein the second layer includes a oxide of a element selected from the group consisting of boron (B), silicon (Si), germanium (Ge), tungsten (W), niobium (Nb), molybdenum (Mo), phosphorous (P), vanadium (V), antimony (Sb), zirconium (Zr), titanium (Ti), zinc (Zn), lead (Pb), chromium (Cr), tin (Sn), gallium (Ga), iron (Fe), cobalt (Co), and rare earth metals, and further includes an element selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os), in a range from 1 atomic % to 50 atomic %.

19. The magnetoresistance effect element according to claim 13, wherein the non-magnetic metal is selected from the group consisting of copper (Cu), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), and osmium (Os).

20. The magnetoresistance effect element according to claim 13, wherein the second regions are substantially uniformly distributed in the second layer.