×

Micro-electromechanical capacitive strain sensor

  • US 7,380,461 B2
  • Filed: 03/09/2007
  • Issued: 06/03/2008
  • Est. Priority Date: 03/09/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A micro-electromechanical capacitive strain sensor, comprising:

  • first and second bent beams made of single crystal silicon;

    a straight central beam made of single crystal silicon; and

    first and second anchors, wherein said first and second beams and said straight central beam are disposed between said first and second anchors,wherein said straight central beam, first and second bent beams and said anchors form an essentially planar structure, wherein the distance between said first and second anchors is between about 900 μ

    m and 1,500 μ

    m,wherein each of said first and second bent beams define first and second opposite end rafter segments and a straight middle collar segment,wherein said first bent beam is manufactured to be bent away from said center beam and said second bent beam is manufactured to be bent towards said center beam to provide a set of differential capacitors with respect to said center beam, wherein said center beam serves as a common reference with respect to said first and second bent beams such that when said first and second opposite ends of said first, second and center beams are displaced in opposite directions in the X-axis the first bent beam is deflected in the Y-axis direction towards the center beam thereby increasing capacitance and the second bent beam is deflected in the Y-axis direction away from said center beam thereby decreasing capacitance.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×