Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode
First Claim
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1. A method for making a semiconductor device comprising:
- forming a silicon dioxide layer on a substrate;
adding nitrogen to the silicon dioxide layer to form a nitrided silicon dioxide layer;
forming a sacrificial layer on the nitrided silicon dioxide layer;
forming a pair of spacers on opposite sides of the nitrided silicon dioxide layer;
removing the sacrificial layer to generate a trench between the pair of spacers;
forming a high-k gate dielectric layer on the nitrided silicon dioxide layer and within the trench; and
forming a metal gate electrode on the high-k gate dielectric layer.
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Abstract
A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.
115 Citations
20 Claims
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1. A method for making a semiconductor device comprising:
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forming a silicon dioxide layer on a substrate; adding nitrogen to the silicon dioxide layer to form a nitrided silicon dioxide layer; forming a sacrificial layer on the nitrided silicon dioxide layer; forming a pair of spacers on opposite sides of the nitrided silicon dioxide layer; removing the sacrificial layer to generate a trench between the pair of spacers; forming a high-k gate dielectric layer on the nitrided silicon dioxide layer and within the trench; and forming a metal gate electrode on the high-k gate dielectric layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for making a semiconductor device comprising:
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forming a silicon dioxide layer on a substrate; adding nitrogen to the silicon dioxide layer to form a nitrided silicon dioxide layer; forming a polysilicon containing layer on the nitrided silicon dioxide layer; forming a hard mask layer on the polysilicon containing layer; etching the hard mask layer, the polysilicon containing layer and the nitrided silicon dioxide layer to form a hard mask that covers a patterned polysilicon containing layer and a patterned nitrided silicon dioxide layer; forming first and second spacers on opposite sides of the patterned polysilicon containing layer and the patterned nitrided silicon dioxide layer; exposing the patterned polysilicon containing layer to an aqueous solution that comprises a source of hydroxide to remove the patterned polysilicon containing layer, while retaining the patterned nitrided silicon dioxide layer, and to generate a trench that is positioned between the first and second spacers; forming a high-k gate dielectric layer on the patterned nitrided silicon dioxide layer and within the trench; and forming a metal gate electrode on the high-k gate dielectric layer. - View Dependent Claims (7, 8, 9, 10)
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11. A method for making a semiconductor device comprising:
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forming a silicon dioxide layer on a substrate; adding nitrogen to the silicon dioxide layer to form a nitrided silicon dioxide layer; forming a polysilicon containing layer on the nitrided silicon dioxide layer; forming a silicon nitride containing layer on the polysilicon containing layer; etching the silicon nitride containing layer, the polysilicon containing layer and the nitrided silicon dioxide layer to form first and second silicon nitride containing hard masks that cover first and second patterned polysilicon containing layers and first and second patterned nitrided silicon dioxide layers; forming first and second spacers on opposite sides of the first patterned polysilicon containing layer and the first patterned nitrided silicon dioxide layer, and forming third and fourth spacers on opposite sides of the second patterned polysilicon containing layer and the second patterned nitrided silicon dioxide layer; removing the first and second silicon nitride containing hard masks from the first and second patterned polysilicon containing layers; exposing the first and second patterned polysilicon containing layers to an aqueous solution that comprises a source of hydroxide to remove the first and second patterned polysilicon containing layers, while retaining the first and second patterned nitrided silicon dioxide layers, and to generate a first trench that is positioned between the first and second spacers and a second trench that is positioned between the third and fourth spacers; forming a high-k gate dielectric layer on the first and second nitrided silicon dioxide layers and within the first and second trenches; forming a metal layer on the high-k gate dielectric layer; forming a masking layer on the metal layer, a first part of the masking layer covering a first part of the high-k gate dielectric layer and a second part of the masking layer covering a second part of the high-k gate dielectric layer; removing the second part of the masking layer while retaining the first part of the masking layer, exposing part of the metal layer; removing the exposed part of the metal layer to generate a first metal layer that covers the first part of the high-k gate dielectric layer but does not cover the second part of the high-k gate dielectric layer; removing the first part of the masking layer; and forming a second metal layer on the first metal layer and on the second part of the high-k gate dielectric layer, the second metal layer covering the first metal layer and covering the second part of the high-k gate dielectric layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification