Composition and method for removing photoresist materials from electronic components

• US 7,381,694 B2
• Filed: 01/11/2005
• Issued: 06/03/2008
• Est. Priority Date: 03/30/1998
• Status: Expired due to Fees

• Current Assignee: Los Alamos National Security LLC (Government of the United States of America)
• Original Assignee: Los Alamos National Security LLC (Government of the United States of America)
• Inventors: Rubin, James B., Davenhall, Leisa B., Taylor, Craig M. V.
• Primary Examiner(s): Webb; Gregory E
• Application Number:
  US11/034,519
• Publication Number:
  US 20050124516A1
• Time in Patent Office: 1,239 Days
• Field of Search: 510/175, 510/176, 134/1, 134/1.3, 438/745, 814/2
• US Class Current: 510/175
• CPC Class Codes: B08B 3/102 with means for agitating the liquid by agitating the container B08B3/042, B08B3/044, B08B3/045, B08B3/06
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 7/24 Hydrocarbons
• CPC Class Codes: C11D 7/266 Esters or carbonates
• CPC Class Codes: C11D 7/267 Heterocyclic compounds
• CPC Class Codes: C11D 7/28 containing halogen
• CPC Class Codes: C11D 7/34 containing sulfur
• CPC Class Codes: C11D 7/50 Solvents
• CPC Class Codes: C11D 7/5004 Organic solvents
• CPC Class Codes: G03F 7/422 using liquids only G03F7/421 takes precedence
• CPC Class Codes: H01L 21/31133 by chemical means

Abstract

Composition and method for removing photoresist materials from electronic components. The composition is a mixture of at least one dense phase fluid and at least one dense phase fluid modifier. The method includes exposing a substrate to at least one pulse of the composition in a supercritical state to remove photoresist materials from the substrate.

Claims

1. A method for pulsing fluids comprising:

forming a treating fluid mixture under pressure;

positioning a substrate to be treated in a processing vessel, the substrate having a material adhered to the substrate;

sending treating fluid mixture into the processing vessel;

releasing a first pulse of the fluid out of the processing vessel;

sending treating fluid mixture into the processing vessel again; and

releasing a second pulse of the fluid out of the processing vessel, whereby the releasing of the pulses of fluid results in removing adhered material from the substrate.

2. The method of claim 1, wherein the treating fluid mixture comprises a supercritical composition at a temperature of about 0-300°

C. and a pressure of about 500-10,500 psi.

3. The method of claim 1, wherein the treating fluid mixture comprises a supercritical composition at a temperature of about 15-200°

C. and a pressure of about 1000-6000 psi.

4. The method of claim 1, wherein the treating fluid comprises a supercritical composition at a temperature of about 40-100°

C. and a pressure of about 1200-3000 psi.

5. The method of claim 1, wherein the fluid pulsing is repeated until substantially all surface material is removed from the substrate.

6. The method of claim 1, wherein the treating fluid comprises a dense phase fluid selected from the group consisting of carbon dioxide, argon, helium, nitrogen, ethane, methane, propane, butane, and ammonia.

7. The method of claim 1, wherein the treating fluid comprises a dense phase fluid modifier.

8. The method of claim 1, wherein the treating fluid comprises a supercritical composition, the supercritical composition comprising a mixture of at least one dense phase fluid and at least one dense phase fluid modifier.

9. The method of claim 7, wherein the dense fluid modifier has the formula

10. The method of claim 9, wherein the dense phase fluid modifier is present in an amount in the range of from greater than 0 percent to about 30 percent, based on total volume of said composition.

11. The method of claim 9, wherein the dense phase fluid modifier is present in an amount in the range from 0.1 percent to about 20 percent, based on total volume of said composition.

12. The method of claim 9, wherein the dense phase fluid modifier is present in an amount in the range from 0.2 percent to about 10 percent, based on total volume of said composition.