Trench gate FETs with reduced gate to drain charge

• US 7,382,019 B2
• Filed: 04/26/2005
• Issued: 06/03/2008
• Est. Priority Date: 04/26/2005
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Challa, Ashok, Marchant, Bruce D.
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US11/116,106
• Publication Number:
  US 20060237781A1
• Time in Patent Office: 1,134 Days
• Field of Search: 257/60, 257/135, 257/136, 257263-267, 257/302, 257328-334
• US Class Current: 257/330
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A field effect transistor includes a trench extending into a semiconductor region. The trench has a gate dielectric lining the trench sidewalls and a gate electrode therein. A channel region in the semiconductor region extends along a sidewall of the trench. The gate dielectric has a non-uniform thickness such that a variation in thickness of the gate dielectric along at least a lower portion of the channel region is inversely dependent on a variation in doping concentration in the at least a lower portion of the channel region.

Claims

1. A field effect transistor comprising:

a trench extending into a semiconductor region;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench; and

a channel region in the semiconductor region extending along a sidewall of the trench,

wherein the gate dielectric has a non-uniform thickness, a variation in thickness of the gate dielectric along at least a lower portion of the channel region being inversely dependent on a variation in doping concentration in the lower portion of the channel region such that the variation in thickness of the gate dielectric does not increase a threshold voltage of the field effect transistor.

2. The field effect transistor of claim 1 wherein a lower portion of the gate dielectric has a tapered edge.

3. The field effect transistor of claim 1 wherein the semiconductor region has a first conductivity type, the field effect transistor further comprising:

a well region of a second conductivity type in the semiconductor region; and

a source region of the first conductivity type in the well region;

wherein the channel region extends in the well region and is defined by a spacing between the source region and a bottom surface of the well region.

4. The field effect transistor of claim 3 wherein the doping concentration in the channel region decreases from a maximum concentration in the direction from the source region toward a bottom surface of the well region, and a thickness of the gate dielectric increases from a point below the maximum concentration in the direction from the source region to the bottom surface of the well region.

5. The field effect transistor of claim 3 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trench extending through the well region and terminating below the bottom surface of the well region.

6. A field effect transistor comprising:

a trench extending into a semiconductor region of a first conductivity type;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench;

a well region of the second conductivity type in the semiconductor region;

a source region of the first conductivity type in the well region; and

a channel region extending along a trench sidewall in the well region, the channel region being defined by a spacing between the source region and a bottom surface of the well region, the channel region having a doping concentration which decreases from a maximum concentration in the direction from the source region toward a bottom surface of the well region, and the gate dielectric having a uniform thickness along an upper portion of the channel region and a non-uniform thickness along a remaining lower portion of the channel region, the non-uniform thickness of the gate dielectric increasing from a point below the maximum concentration in the direction from the source region to a point below the bottom surface of the well region,

wherein a rate at which the non-uniform thickness of the gate dielectric increases is dependent on a rate at which the doping concentration in the corresponding portion of the channel region decreases such that the increase in the gate dielectric thickness does not increase a threshold voltage of the FET.

7. The field effect transistor of claim 6 wherein the gate electrode has an upper portion with a substantially uniform width and a lower portion with inwardly tapered sidewalls.

8. The field effect transistor of claim 6 further comprising a thick bottom insulator below the gate electrode, a thickness of the gate dielectric at an interface between the gate electrode and the thick bottom insulator being greater than a thickness of the gate dielectric at any point above the interface.

9. A field effect transistor comprising:

a semiconductor region of a first conductivity type;

a well region of a second conductivity type in the semiconductor region;

a source region of the first conductivity type in the well region;

a trench extending into the semiconductor region;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench;

a channel region extending along a trench sidewall in the well region, the channel region having a channel length defined by a spacing between the source region and a bottom surface of the well region,

wherein the gate dielectric has an upper portion with a uniform thickness and a lower portion with a non-uniform thickness, the lower portion of the gate dielectric extending along at least one-half the channel length, wherein a thickness of the gate dielectric at any point along the lower portion of the gate dielectric is greater than the uniform thickness of the gate dielectric, and

wherein a thickness of the gate dielectric linearly increases from a point along an upper half of the channel region to a second thickness at a point below the bottom surface of the well region.

10. The field effect transistor of claim 9 wherein the lower portion of the gate dielectric has a tapered edge.

11. The field effect transistor of claim 9 wherein the trench includes a thick bottom insulator below the gate electrode, the thick bottom insulator having a greater thickness than the uniform thickness of the upper portion of the gate dielectric.

12. The field effect transistor of claim 9 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trench extending through the well region and terminating below a bottom surface of the well region.

13. A field effect transistor comprising:

a semiconductor region;

a trench extending into the semiconductor region;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench; and

a channel region extending along a sidewall of the trench,

wherein the gate dielectric has an upper portion with a uniform thickness, and a thickness of the gate dielectric linearly increases from a first thickness at a point along an upper half of the channel region to a second thickness at a point near a bottom surface of the gate electrode.

14. The field effect transistor of claim 13 wherein the semiconductor region has a first conductivity type, the field effect transistor further comprising:

a well region of a second conductivity type in the semiconductor region;

a source region of the first conductivity type in the well region;

a thick bottom insulator in the trench below the gate electrode, the thick bottom insulator having a greater thickness than the first thickness of the gate dielectric;

wherein the trench extends through the well region and terminates below a bottom surface of the well region, and the channel region extends in the well region and is defined by a spacing between the source region and the bottom surface of the well region.

15. A field effect transistor comprising:

a semiconductor region of a first conductivity type;

a well region of a second conductivity type in the semiconductor region;

a source region of the first conductivity type in the well region;

a trench extending into the semiconductor region;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench;

a channel region extending along a trench sidewall in the well region, the channel region having a channel length defined by a spacing between the source region and a bottom surface of the well region,

wherein the gate dielectric has an upper portion with a uniform thickness and a lower portion with a non-uniform thickness, the lower portion of the gate dielectric extending along at least one-half the channel length, wherein a thickness of the gate dielectric at any point along the lower portion of the gate dielectric is greater than the uniform thickness of the gate dielectric, and

wherein the channel region has a doping concentration which decreases from a maximum value near the source region to a lower value near a bottom surface of the well region, and wherein a variation in thickness of the lower portion of the gate dielectric is inversely dependent on the variation in the doping concentration in the channel region.

16. The field effect transistor of claim 15 wherein the lower portion of the gate dielectric has a tapered edge.

17. The field effect transistor of claim 15 wherein the trench includes a thick bottom insulator below the gate electrode, the thick bottom insulator having a greater thickness than the uniform thickness of the upper portion of the gate dielectric.

18. The field effect transistor of claim 15 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trench extending through the well region and terminating below a bottom surface of the well region.

20. The field effect transistor of claim 18 wherein a lower portion of the gate dielectric has a tapered edge.

21. The field effect transistor of claim 18 wherein the semiconductor region has a first conductivity type, the field effect transistor further comprising:

a well region of a second conductivity type in the semiconductor region; and

a source region of the first conductivity type in the well region;

wherein the channel region extends in the well region and is defined by a spacing between the source region and a bottom surface of the well region.

22. The field effect transistor of claim 21 wherein the doping concentration in the channel region decreases from a maximum concentration in the direction from the source region toward a bottom surface of the well region, and a thickness of the gate dielectric increases from a point below the maximum concentration in the direction from the source region to the bottom surface of the well region.

23. The field effect transistor of claim 21 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trench extending through the well region and terminating below the bottom surface of the well region.

19. A field effect transistor comprising:

a trench extending into a semiconductor region;

a gate dielectric lining the trench sidewalls;

a gate electrode in the trench; and

a channel region in the semiconductor region extending along a sidewall of the trench,

wherein at least a portion of the gate dielectric has a non-uniform thickness which linearly increases along at least a lower portion of the channel region starting from a point along an upper half of the channel region, the linear increase in thickness of the gate dielectric along the at least a lower portion of the channel region being inversely dependent on a variation in doping concentration in the at least a lower portion of the channel region.