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NAND flash memory and blank page search method therefor

  • US 7,382,652 B2
  • Filed: 11/30/2006
  • Issued: 06/03/2008
  • Est. Priority Date: 06/10/2004
  • Status: Active Grant
First Claim
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1. A blank page search method for a semiconductor memory device, comprising:

  • setting a selection word line voltage to a first level and detecting at once whether all data in two pages are in an erase state; and

    when it is detected at once that not all the data are in the erase state, setting the selection word line voltage to a second level and detecting at once whether all data in one of the two pages are in the erase state.

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