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Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer

  • US 7,383,843 B2
  • Filed: 06/30/2004
  • Issued: 06/10/2008
  • Est. Priority Date: 09/30/2002
  • Status: Active Grant
First Claim
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1. An apparatus for processing a substrate, comprising:

  • a head capable of moving in proximity to a surface of the substrate and generating a fluid layer on the surface of the substrate to define a fluid meniscus, the proximity head including,a head surface having flat surface regions;

    at least one inlet defined in the head surface for applying a fluid to the surface of the substrate to define the fluid layer,at least one outlet defined in the head surface for removing the fluid from the surface of the substrate;

    wherein the head is defined to move the fluid along the fluid layer between the head surface and the substrate at a velocity that increases as the head is in closer proximity to the surface, and the head surface is defined so that the at least one inlet and at least one outlet are defined by discrete holes that reside at the head surface and extend through the flat surface regions of the head surface.

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