Methods for electrochemically fabricating multi-layer structures including regions incorporating maskless, patterned, multiple layer thickness depositions of selected materials

• US 7,384,530 B2
• Filed: 05/07/2004
• Issued: 06/10/2008
• Est. Priority Date: 05/07/2002
• Status: Active Grant

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Smalley, Dennis R., Cohen, Adam L.
• Primary Examiner(s): Nguyen; Nam
• Assistant Examiner(s): Van; Luan V.
• Application Number:
  US10/841,001
• Publication Number:
  US 20050023144A1
• Time in Patent Office: 1,495 Days
• Field of Search: 205/118, 205/149, 205/170, 205/205, 205/220, 205/222, 205/223, 427/532, 427/576, 427/99.3, 216/39, 216/72
• US Class Current: 205/118
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81C 1/00126 Static structures not provided for in groups B81C1/00031 - B81C1/00119
• CPC Class Codes: B81C 1/00396 Mask characterised by its composition, e.g. multilayer masks
• CPC Class Codes: B81C 2201/032 LIGA process
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01P 1/202 Coaxial filters cascaded coaxial cavities H01P1/205
• CPC Class Codes: H01P 11/00 Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
• CPC Class Codes: H01P 11/005 Manufacturing coaxial lines
• CPC Class Codes: H01P 3/06 Coaxial lines
• CPC Class Codes: H01P 5/183 at least one of the guides being a coaxial line
• CPC Class Codes: H05K 3/4647 by applying an insulating layer around previously made via studs

Abstract

The invention includes methods of fabrication and apparatuses. In at least some embodiments of the applicants'"'"' invention, the methods include processes of: maskless selective deposition of non-layered structures, selective etching and/or deposition without use of a separate mask and/or lithography techniques, retaining selected portions of sacrificial material during removal (e.g. etching) of other portions of sacrificial material, depositing materials other than the structural and sacrificial materials, including more than one type of structural and/or sacrificial material, and fabrication of interlacing elements. Embodiments of the methods of the invention provide increased capabilities, properties, flexibility and in the fabrication of three-dimensional structures by electro-deposition or other techniques. In certain embodiments, the apparatuses of the invention include structures having non-layered elements, retained sacrificial materials, three or more different deposited materials, and interlaced elements.

Claims

1. A method for forming a three-dimensional structure, comprising:

(a) providing a substrate on which to build up multiple layers of multiple deposited materials;

(b) depositing two or more materials to form a layer of desired cross-sectional configuration adhered to the substrate or a previous formed layer;

(c) repeating the operation of (b) one or more times to build up a plurality of layers on the substrate, such that each layer has a desired cross-sectional configuration which when taken in combination with other cross-sectional configurations result in the formation of at least one removal region, occupied by at least one conductive removable material, that is multiple layers in thickness and that is in contact with a retention region where the contact between the at least one retention region and the at least one removal region is via a conductive barrier material,

(d) removing material from the at least one removal region by a removal operation to form at least one multi-layer deposition region while not removing material from the at least one retention region as the barrier material inhibits the removal operation from accessing and removing any removable material located in the at least one retention region;

(e) filling the deposition region with a desired structural material.

2. The method of claim 1 additionally comprising:

(f) planarizing the structural material.

3. The method of claim 2 additionally comprising:

(g) depositing one or more materials above the planarized structural material to form one or more additional layers of deposited material.

4. A method for forming a three-dimensional structure from a structural material, comprising:

(a) forming a plurality of layers of multiple materials in a desired configuration, where at least one region of a first conductive material is separated from at least one region of a second conductive material by a conductive barrier material;

(b) etching away the first conductive material from the at least one region of first conductive material, to create at least one void, wherein etching is inhibited from removing the second conductive material as a result of the second material being protected, at least in part, as a result of the configuration of the barrier material; and

(c) filling the at least one void with a structural material having a desired three-dimensional configuration.

5. The method of claim 4 wherein the first and second conductive materials are the same.

6. The method of claim 4 additionally comprising:

(d) repeating operations (a)-(c) one or more times to form the three-dimensional structure.

7. A method of fabricating a three-dimensional structure, comprising:

(a) providing a layered structure defining a retention region and a removal region, wherein the removal region has a desired pattern and wherein the retention region comprises a first conductive material positioned to shield a second conductive material, wherein the removal region comprises the second conductive material;

(b) due at least in rart to the shielding provided by the first conductive material, removing the second conductive material from the removal region, without removing the second conductive material from the retention region, to form a deposition region;

(c) depositing a desired material into the deposition region to form a region of desired material which has a thickness greater than one layer thickness; and

(d) planarizing the deposited desired material, such that the thickness of the desired material remains greater than one layer thickness and such that a desired configuration of the desired material is obtained,

wherein the first conductive material functions as a barrier material to protect the second conductive material in the retention region during removal of the second material from the removal region.

8. The method of claim 7, further comprising:

(e) encasing the desired material in a shield of the first conductive material.

9. The method of claim 8, further comprising:

(f) after encasing the desired material, removing the second conductive material from within at least a portion of the retention region.

10. The method of claim 9, further comprising:

(g) removing the first conductive material after encasing the desired material.

11. A method of fabricating a multi-layer structure, comprising:

(a) providing an initial deposition surface;

(b) defining locations for a plurality of layers where at least a first conductive material will be located and where at least a second conductive material will be located,

(c) forming a plurality of layers containing the first and second conductive materials by depositing the first and second conductive materials such that they are located in regions according to the defined locations and wherein the materials define at least one retention region and at least one removal region, wherein the second conductive material is a barrier material that protects the first conductive material located in the retention region;

(d) removing a portion of the first conductive material from the at least one removal region to form at least one multi-layer deposition region;

(e) depositing at least one desired material to fill the multi-layer deposition region;

(f) depositing a capping layer over the desired material; and

(g) after depositing the capping layer, removing at least a portion of the first conductive material located in the retention region.

12. The method of claim 11, wherein (c) additionally comprises forming at least one separation layer between the initial deposition surface and any deposition of the second conductive material.

13. The method of claim 12, wherein the separation layer is formed from the first conductive material.

14. A method for fabricating a three-dimensional structure having interlaced elements comprising:

(a) providing a layered structure having defined retention and removal regions;

(b) removing material from the removal regions to form deposition regions;

(c) depositing a non-layered material into the deposition regions to form a composite structure;

(d) shaping the composite structure;

(e) removing layered structure to define interlace deposition region(s);

(f) depositing a sacrificial material and then sharing the sacrificial material to define an interface removal region;

(g) repeating the steps (a)-(f) one or more times to create a structure from multiple deposits of the non-layered material where successive deposits of the multiple deposits of non-layer material form successive interlaced elements, and wherein the repetition or repetitions of step (a) form the layered structure on previously deposited conductive sacrificial material and non-layered material;

(h) after step (g), removing the conductive sacrificial material; and

(i) depositing a non-layered capping structure, wherein the removal regions are formed from a conductive second material while retention regions are formed from the conductive second material and a conductive first material and wherein the conductive first material provides a barrier that separates the conductive second material in the removal regions from the conductive second material in the retention regions.

15. A method for fabricating extended interlaced elements comprising:

(a) providing a first layered structure having defined retention and removal regions;

(b) removing material from the removal region(s) to form first deposition regions;

(c) depositing a non-layered material into the deposition region(s) to form a first composite structure;

(d) shaping the first composite structure;

(e) providing a second layered structure having defined retention and removal regions on the shaped first composite structure;

(f) removing material from the removal region of the second layered structure to define second deposition regions;

(g) depositing a non-layered material into the second deposition regions to form a second composite structure;

(h) shaping the second composite structure; and

(i) after formation of the first composite structure and the second composite structure, removing the remaining portions of the first and second layered structures,

wherein the removal regions of the first layered structure and the second layered structure are formed from a conductive second material while retention regions of the first layered structure and the second layered structure are formed from the conductive second material and a conductive first material and wherein the conductive first material provides a barrier that separates the conductive second material in the removal regions of the first layered structure from the conductive second material in the retention regions of the first layered structure and wherein the conductive first material provides a barrier that separates the conductive second material in the removal regions of the second layered structure from the conductive second material in the retention regions of the second layered structure.