Method of forming three-dimensional features on light emitting diodes for improved light extraction
First Claim
1. A method of obtaining a lenticular pattern on the surface of a light emitting diode, the method comprising imprinting a pattern into a layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region and etching the imprinted layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
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Abstract
A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
130 Citations
51 Claims
- 1. A method of obtaining a lenticular pattern on the surface of a light emitting diode, the method comprising imprinting a pattern into a layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region and etching the imprinted layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
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28. A method of obtaining a high resolution lenticular pattern on a wide bandgap light emitting diode;
- the method comprising;
adding a photoresist layer to the surface of a semiconductor layer which in turn is on at least one Group III nitride active layer which in turn is on a submounting structure; heating the photoresist layer to a temperature sufficient to internally soften the photoresist but less than the temperature at which the photoresist would lose its self resolution structure; imprinting the heated photoresist layer with an embossing stamp that carries the negative image of the pattern desired for the photoresist; removing the stamp from the photoresist to leave behind an embossed patterned photoresist; curing the patterned photoresist; and removing the entire patterned photoresist layer in a plasma etch along with corresponding portions of the underlying semiconductor layer to produce a lenticular pattern in the semiconductor layer corresponding to the embossing stamp, the embossed photoresist, and the etching ratio between the photoresist and the semiconductor in the plasma etch. - View Dependent Claims (29, 30, 31, 32, 33)
- the method comprising;
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34. A method of obtaining a lenticular surface on a light emitting diode precursor, the method comprising:
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adding a planarizing material to a plurality of silicon carbide mesas and adjacent trenches on a common Group III nitride layer which in turn is on a submounting structure; removing the planarizing material from the surface of the silicon carbide mesas while permitting the material to remain in the trenches between adjacent silicon carbide mesas and to thereby present a common planar surface of silicon carbide and planarizing material; adding a photoresist layer to the common planar surface; imprinting the photoresist with an embossing stamp; removing the embossing stamp from the imprinted photoresist; and etching the photoresist to completely remove the photoresist, the planarizing material and portions of the underlying silicon carbide to produce a lenticular pattern in the silicon carbide defined by the embossed photoresist and the etch ratio between the photoresist and the silicon carbide in the etching material. - View Dependent Claims (35, 36, 37)
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38. A method of obtaining a lenticular pattern on the surface of a light emitting diode, the method comprising:
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imprinting a patterned sacrificial layer of etchable material that is positioned on the surface of a semiconductor structure that includes a light emitting active region; and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer the imprinted pattern. - View Dependent Claims (39, 40, 41, 42)
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43. A method of obtaining a lenticular pattern on the surface of a light emitting diode, the method comprising:
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imprinting a pattern into a layer of photoresist that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region; masking the photoresist with a complementary pattern; exposing and developing the photoresist; and thereafter etching the imprinted developed photoresist and the underlying semiconductor to transfer the imprinted and complementary patterns into the semiconductor layer adjacent the light emitting active region. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51)
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Specification