Semiconductor device tester

• US 7,385,195 B2
• Filed: 08/05/2005
• Issued: 06/10/2008
• Est. Priority Date: 11/05/1999
• Status: Expired due to Fees

• Current Assignee: Topcon Corporation
• Original Assignee: Topcon Corporation
• Inventors: Yamada, Keizo, Itagaki, Yousuke, Ushiki, Takeo, Tsujide, Tohru
• Primary Examiner(s): VANORE, DAVID A
• Application Number:
  US11/198,780
• Publication Number:
  US 20060202119A1
• Time in Patent Office: 1,040 Days
• Field of Search: 250/307, 250/310, 324/751
• US Class Current: 250/307
• CPC Class Codes: G01R 31/307 of integrated circuits
• CPC Class Codes: H01J 2237/20228 Mechanical X-Y scanning
• CPC Class Codes: H01J 2237/221 Image processing
• CPC Class Codes: H01J 2237/24564 Measurements of electric or magnetic variables, e.g. voltage, current, frequency
• CPC Class Codes: H01J 37/256 using scanning beams

Abstract

A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

Claims

1. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:

irradiating the one or more holes with an electron beam after formation of the one or more holes is completed; and

determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

2. The method of claim 1 wherein the electron beam includes a cross-section that is greater than an aperture of one of the holes.

3. The method of claim 1 further including measuring a substrate current wherein the substrate current is generated in response to the electron beam irradiated on the one or more holes.

4. The method of claim 1 wherein determining information relating to the bottom diameter or a bottom circumference of the one or more holes includes using data which is representative of substrate currents for a plurality of incident angles of the electron beam on the semiconductor wafer.

5. The method of claim 1 further including determining the presence of a film or dust in the one or more holes using the data which is representative of a substrate current which is generated in response to irradiating the one or more holes with an electron beam and a reference value and wherein the reference value is determined using a test region having one or more holes that are similar to the one or more holes on the semiconductor wafer.

6. The method of claim 1 wherein irradiating the one or more holes with an electron beam further includes scanning the electron beam across the one or more holes.

7. The method of claim 1 wherein irradiating the one or more holes with an electron beam includes irradiating the one or more holes with the electron beam at a constant beam angle relative to the surface of the wafer.

8. The method of claim 1 wherein irradiating the one or more holes with an electron beam includes irradiating the one or more holes with an electron beam having a constant electron beam acceleration.

9. The method of claim 1 wherein irradiating the one or more holes with an electron beam includes scanning the electron beam relative to the wafer.

10. The method of claim 1 further including measuring an amount of substrate current at a back surface of the wafer wherein the current is generated in response to irradiating the one or more holes with the electron beam.

11. The method of claim 1 wherein the electron beam includes a cross-section that is rectangular, circular or square.

12. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:

irradiating the one or more holes with an electron beam; and

determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam;

wherein determining information relating to the bottom diameter or the bottom circumference of the one or more holes includes using data which is representative of substrate currents measured for a plurality of acceleration voltages of the electron beam.

13. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:

irradiating the one or more holes with an electron beam; and

determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam; and

determining the presence of a film or dust in the one or more holes using the data which is representative of a substrate current which is generated in response to irradiating the one or more holes with an electron beam.