Thin film transistor having an etching protection film and manufacturing method thereof
First Claim
1. A thin film transistor comprising:
- a semiconductor thin film including a source region, a drain region, and a channel region, the semiconductor thin film comprising a peripheral edge and a peripheral portion which is adjacent to the peripheral edge;
a gate insulating film formed on a first surface of the semiconductor thin film;
a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween;
a source electrode and a drain electrode electrically connected to the semiconductor thin film; and
an insulating film which;
(i) is formed on a second surface of the semiconductor thin film, (ii) comprises a peripheral portion covering the peripheral portion of the semiconductor thin film and a peripheral edge having a same shape as the peripheral edge of the semiconductor thin film, and (iii) has contact holes through which at least a part of each of the source region and the drain region is exposed,wherein the source electrode and the drain electrode are connected to the semiconductor thin film through the contact holes.
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Accused Products
Abstract
A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
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Citations
16 Claims
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1. A thin film transistor comprising:
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a semiconductor thin film including a source region, a drain region, and a channel region, the semiconductor thin film comprising a peripheral edge and a peripheral portion which is adjacent to the peripheral edge; a gate insulating film formed on a first surface of the semiconductor thin film; a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween; a source electrode and a drain electrode electrically connected to the semiconductor thin film; and an insulating film which;
(i) is formed on a second surface of the semiconductor thin film, (ii) comprises a peripheral portion covering the peripheral portion of the semiconductor thin film and a peripheral edge having a same shape as the peripheral edge of the semiconductor thin film, and (iii) has contact holes through which at least a part of each of the source region and the drain region is exposed,wherein the source electrode and the drain electrode are connected to the semiconductor thin film through the contact holes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A thin film transistor comprising:
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a semiconductor thin film including a source region, a drain region and a channel region; a gate insulating film formed on one surface of the semiconductor thin film; a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween; an ohmic contact layer formed on each of the source region and the drain region of the semiconductor thin film; and an insulating film formed on the channel region of the semiconductor thin film corresponding to the gate electrode, wherein a width of the channel region is larger than a width of at least one of the source region and the drain region, and wherein the ohmic contact layer is formed to cover an upper surface end portion of the insulating film, an upper surface of the semiconductor thin film, and an end surface of the semiconductor thin film in a channel direction, except for a portion of the channel region. - View Dependent Claims (12, 13)
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14. A thin film transistor comprising:
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a semiconductor thin film comprising a source region, a drain region and a channel region; a gate insulating film formed on one surface of the semiconductor thin film; a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween; a source electrode and a drain electrode electrically connected to the semiconductor thin film; and an insulating film formed on the channel region of the semiconductor thin film corresponding to the gate electrode, wherein a width of the channel region is larger than a width of at least one of the source region and the drain region, wherein the semiconductor thin film comprises an exposed resistance-reduced surface that is not covered with the insulating film, and wherein the source electrode and the drain electrode are respectively formed to cover an upper surface end portion of the insulating film, an upper surface of the semiconductor thin film, and an end surface of the semiconductor thin film in a channel direction, except for a portion of the channel region. - View Dependent Claims (15, 16)
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Specification