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Shielded gate field effect transistor with improved inter-poly dielectric

  • US 7,385,248 B2
  • Filed: 08/09/2005
  • Issued: 06/10/2008
  • Est. Priority Date: 08/09/2005
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET) comprising:

  • a trench extending into a silicon region of a first conductivity type;

    a shield electrode in a lower portion of the trench, the shield electrode being insulated from the silicon region by a shield dielectric; and

    a gate electrode in the trench over but insulated from the shield electrode by an inter-poly dielectric (IPD), the IPD comprising a conformal layer of dielectric and a thermal oxide layer.

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