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Semiconductor device having silicide thin film and method of forming the same

  • US 7,385,260 B2
  • Filed: 04/21/2004
  • Issued: 06/10/2008
  • Est. Priority Date: 03/19/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a gate insulation layer on an active region of a semiconductor substrate;

    a gate electrode on the gate insulation layer;

    a lightly-doped source/drain region at both sides of the gate electrode in the active region;

    a first spacer on sidewalls of the gate electrode and on at least a portion of the lightly-doped source/drain regions, wherein the first spacer is L-shaped and comprises silicon oxide;

    a second spacer on the first spacer, wherein the second spacer comprises silicon nitride;

    a heavily-doped source/drain region at both sides of the gate electrode and adjacent to the second spacer;

    a cobalt silicide layer on the heavily-doped source/drain regions; and

    a subsidiary layer covering the cobalt silicide layer, the first spacer and the second spacer, wherein the subsidiary layer has a higher oxygen concentration in a lower portion of the subsidiary layer contacting the cobalt silicide layer than in another portion of the subsidiary layer not contacting the cobalt silicide layer.

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