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Semiconductor module

  • US 7,385,286 B2
  • Filed: 06/05/2002
  • Issued: 06/10/2008
  • Est. Priority Date: 06/05/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor module comprising:

  • a multi-layer substrate;

    at least four terminal electrodes provided on a surface of said multi-layer substrate;

    a capacitive element layer which is selectively provided at an internal area of said multi-layer substrate placed directly below all of said terminal electrodes in a substrate thickness direction, said capacitive element layer is encapsulated by a different material comprising the multi-layer substrate; and

    a semiconductor device which is flip-chip-bonded to said terminal electrodes,wherein the height variation of said terminal electrodes provided on the surface of said multi-layer substrate is equal to or less than 10 μ

    m;

    internal electrodes are provided on opposite sides of said capacitive element layer in the substrate thickness direction; and

    longitudinal length of said internal electrodes is smaller than a length equivalent to a quarter-wavelength of a wavelength of an electronic signal inputted into said semiconductor device.

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