Membrane 3D IC fabrication
First Claim
1. A method of information processing using overlying integrated circuits, at least two of the integrated circuits each comprising a transparent stress-controlled dielectric layer, the method comprising:
- transferring information horizontally through horizontal transmission paths;
transferring information vertically between the at least two of the integrated circuits through vertical transmission paths; and
at least one of (1) processing the information on at least one of the at least two of the integrated circuits and (2) storing the information on at least one of the at least two of the integrated circuits.
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Accused Products
Abstract
General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially forced from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D 1C fabrication.
251 Citations
23 Claims
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1. A method of information processing using overlying integrated circuits, at least two of the integrated circuits each comprising a transparent stress-controlled dielectric layer, the method comprising:
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transferring information horizontally through horizontal transmission paths; transferring information vertically between the at least two of the integrated circuits through vertical transmission paths; and at least one of (1) processing the information on at least one of the at least two of the integrated circuits and (2) storing the information on at least one of the at least two of the integrated circuits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification