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User-configurable pre-recorded memory

  • US 7,386,652 B2
  • Filed: 11/15/2005
  • Issued: 06/10/2008
  • Est. Priority Date: 04/04/2004
  • Status: Active Grant
First Claim
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1. A narrow-line three-dimensional memory (3D-M), comprising:

  • a substrate having a transistor-based memory, said transistor-based memory comprising a plurality of transistors and a plurality of first address-selection lines in parallel; and

    a diode-based memory stacked above said substrate and coupled to said substrate through a plurality of inter-level vias, said diode-based memory comprising a plurality of diodes and a plurality of second address-selection lines in parallel;

    wherein said diode-based memory comprises no transistors, and the minimum pitch of said second address-selection lines is smaller than the minimum pitch of said first address-selection lines.

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