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Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus

  • US 7,387,949 B2
  • Filed: 12/16/2005
  • Issued: 06/17/2008
  • Est. Priority Date: 12/21/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device manufacturing method comprising:

  • affixing a semiconductor wafer, which includes a plurality of semiconductor element sections which a conductive material is buried in, to a supporting body via an adhesive layer;

    forming a penetrating electrode which penetrates the plurality of semiconductor element sections and has the conductive material, by thinning the semiconductor wafer;

    cutting the semiconductor wafer so that the supporting body remains, and dividing the semiconductor wafer into the plurality of semiconductor element sections;

    forming a resin layer after the cutting of the semiconductor wafer, the resin layer selectively covering side walls and corners of the plurality of semiconductor element sections formed by cutting the semiconductor wafer; and

    peeling the semiconductor element sections from the supporting body after the forming of the resin layer.

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