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Light emitting element and light emitting device

DC
  • US 7,388,232 B2
  • Filed: 10/28/2004
  • Issued: 06/17/2008
  • Est. Priority Date: 10/31/2003
  • Status: Expired due to Fees
First Claim
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1. A light emitting element, comprising:

  • plural GaN-based semiconductor layers comprising a light emitting layer; and

    a diffusion layer that diffuses light emitted from the semiconductor layers to increase the external radiation efficiency of the light emitting element,wherein the plural GaN-based semiconductor layers further comprise a light extraction face,wherein the diffusion layer comprises a TiO2 coating film that substantially wraps phosphor particles and has an uneven surface, and has a refractive index substantially equal to or greater than that of the light extraction face,wherein the TiO2 coating film contacts directly the light extraction face, andwherein said TiO2 coating film has a thickness substantially smaller than sizes of the phosphor particles, such that the uneven surface of the TiO2 coating film at least partially conforms with top surfaces of the phosphor particles.

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