Organometallic compounds
First Claim
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1. A method of depositing a film comprising a Group IIIA metal on a substrate comprising the steps of:
- a) conveying a Group IIIA metal compound of formula I, R3M, where M is a Group IIIA metal and each R is independently a (C1-C10) organic radical or hydrogen, in a gaseous phase to a deposition chamber containing the substrate;
b) conveying a catalytic amount of a catalyst compound in a gaseous phase to the deposition chamber containing the substrate, wherein the catalyst compound is chosen from hydrazine, hydrazoic acid, diethyl beryllium, n-butyl lithium, bis(n-butyl)magnesium secondary arsines and tertiary arsines;
c) conveying one or more of ammonia, phosphine and arsine in a gaseous phase to the deposition chamber containing the substrate;
d) decomposing the Group IIIA metal compound and the one or more of ammonia, phosphine and arsine in the deposition chamber; and
e) depositing the film comprising the Group IIIA metal on the substrate and wherein the catalyst compound is chosen from hydrazine, hydrazoic acid, diethyl beryllium, n-butyl lithium, bis(n-butyl)magnesium, bis(ethylcyclopentadienyl)nickel, titanium tetrachloride, RuCp2, Mo(EtBz)2, CoCp2, Ba(nPrMe4Cp)2, Ca(Me5Cp)2, Cu(TMHD)2, CrCp2, ErCp3, FeCp2, Me2Au(acac), LaCp3, MnCp2, MoCp2, OsCp2, Me3Pd(MeCp), Me3Pt(MeCp), Rh(acac)2, (hfacac)AgVTES, Sr(nPrMe4Cp)2, Sr(hfacac), (iPrCp)2WH2, VCp2, V(EtCp)2, Y(nBuCp)3, InCp, In(Me5Cp), nitrogen-containing compound, phosphorus-containing compound, arsine-containing compound, and a compound of formula II, R1aMYb, wherein M is a Group IIIA metal, each R1 is independently chosen from (C1-C10) organic radical and hydrogen, each Y is independently chosen from a halogen and hydrogen, a is an integer from 0 to 2, b is an integer from 1-3, and a+b=3;
wherein the nitrogen containing compound is chosen from primary amines, secondary amines and tertiary amines;
wherein the phosphorus-containing compound is chosen from primary phosphines, secondary phosphines and tertiary phosphines; and
wherein the arsenic-containing compound is chosen from primary arsines, secondary arsines and tertiary arsines.
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Abstract
Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.
20 Citations
9 Claims
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1. A method of depositing a film comprising a Group IIIA metal on a substrate comprising the steps of:
- a) conveying a Group IIIA metal compound of formula I, R3M, where M is a Group IIIA metal and each R is independently a (C1-C10) organic radical or hydrogen, in a gaseous phase to a deposition chamber containing the substrate;
b) conveying a catalytic amount of a catalyst compound in a gaseous phase to the deposition chamber containing the substrate, wherein the catalyst compound is chosen from hydrazine, hydrazoic acid, diethyl beryllium, n-butyl lithium, bis(n-butyl)magnesium secondary arsines and tertiary arsines;
c) conveying one or more of ammonia, phosphine and arsine in a gaseous phase to the deposition chamber containing the substrate;
d) decomposing the Group IIIA metal compound and the one or more of ammonia, phosphine and arsine in the deposition chamber; and
e) depositing the film comprising the Group IIIA metal on the substrate and wherein the catalyst compound is chosen from hydrazine, hydrazoic acid, diethyl beryllium, n-butyl lithium, bis(n-butyl)magnesium, bis(ethylcyclopentadienyl)nickel, titanium tetrachloride, RuCp2, Mo(EtBz)2, CoCp2, Ba(nPrMe4Cp)2, Ca(Me5Cp)2, Cu(TMHD)2, CrCp2, ErCp3, FeCp2, Me2Au(acac), LaCp3, MnCp2, MoCp2, OsCp2, Me3Pd(MeCp), Me3Pt(MeCp), Rh(acac)2, (hfacac)AgVTES, Sr(nPrMe4Cp)2, Sr(hfacac), (iPrCp)2WH2, VCp2, V(EtCp)2, Y(nBuCp)3, InCp, In(Me5Cp), nitrogen-containing compound, phosphorus-containing compound, arsine-containing compound, and a compound of formula II, R1aMYb, wherein M is a Group IIIA metal, each R1 is independently chosen from (C1-C10) organic radical and hydrogen, each Y is independently chosen from a halogen and hydrogen, a is an integer from 0 to 2, b is an integer from 1-3, and a+b=3;
wherein the nitrogen containing compound is chosen from primary amines, secondary amines and tertiary amines;
wherein the phosphorus-containing compound is chosen from primary phosphines, secondary phosphines and tertiary phosphines; and
wherein the arsenic-containing compound is chosen from primary arsines, secondary arsines and tertiary arsines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- a) conveying a Group IIIA metal compound of formula I, R3M, where M is a Group IIIA metal and each R is independently a (C1-C10) organic radical or hydrogen, in a gaseous phase to a deposition chamber containing the substrate;
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Current AssigneeROHM and HAAS Electronic Materials LLC
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Original AssigneeRohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
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InventorsShenai-Khatkhate, Deodatta Vinayak, Woelk, Egbert
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Primary Examiner(s)Kunemund; Robert
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Assistant Examiner(s)Chaet; Marissa W.
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Application NumberUS11/237,999Publication NumberTime in Patent Office1,000 DaysField of Search117/1, 118/1, 556/1, 438/1, 257/1US Class Current117/84CPC Class CodesC23C 16/301 AIII BV compounds, where A ...C23C 16/303 NitridesC30B 23/02 Epitaxial-layer growthC30B 25/02 Epitaxial-layer growthC30B 29/40 AIIIBV compounds wherein A ...C30B 29/406 Gallium nitrideC30B 29/42 Gallium arsenideY10T 428/12278 Same structure at both ends...
