Enhanced adhesion strength between mold resin and polyimide
First Claim
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1. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
- providing a semiconductor surface;
forming a stress relief interface layer over said semiconductor surface;
creating openings through said stress relief interface layer before forming a layer of mold compound; and
forming the layer of mold compound over a surface of the stress relief interface layer and filling the openings created through the stress relief interface layer.
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Abstract
A new method is provided for the interface between a stress relieve interface layer of polyimide and a thereover created layer of mold compound. The invention provides for creating a pattern in the stress relieve layer of polyimide before the layer of mold compound is formed over the stress relieve layer of polyimide.
14 Citations
14 Claims
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1. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface; forming a stress relief interface layer over said semiconductor surface; creating openings through said stress relief interface layer before forming a layer of mold compound; and forming the layer of mold compound over a surface of the stress relief interface layer and filling the openings created through the stress relief interface layer. - View Dependent Claims (2, 3, 4)
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5. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface; forming a layer of polyimide over said semiconductor surface; creating openings through the layer of polyimide before forming a layer of mold compound; and forming the layer of mold compound over a surface of the layer of polyimide and filling the openings created through the layer of polyimide. - View Dependent Claims (6, 7)
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8. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface with a layer of passivation formed thereon; forming a stress relief interface layer over said layer of passivation; creating openings through said stress relief interface layer before forming a layer of mold compound; and forming the layer of mold compound over a surface of the stress relief interface layer and filling the openings created through the stress relief interface layer. - View Dependent Claims (9, 10, 11)
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12. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface with a layer of passivation formed thereon; forming a layer of polyimide over said layer of passivation; creating openings through the layer of polyimide before forming a layer of mold compound; and forming the layer of mold compound over a surface of the layer of polyimide and filling the openings created through the layer of polyimide. - View Dependent Claims (13, 14)
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Specification