Method and system for lattice space engineering

• US 7,390,724 B2
• Filed: 04/11/2005
• Issued: 06/24/2008
• Est. Priority Date: 04/12/2004
• Status: Expired due to Fees

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Ong, Philip James, Malik, Igor J.
• Primary Examiner(s): Zarneke, David A
• Application Number:
  US11/104,298
• Publication Number:
  US 20050233545A1
• Time in Patent Office: 1,170 Days
• Field of Search: 438/455, 257/E21.567, 257/E21.561, 257/E21.088
• US Class Current: 438/455
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76251 using bonding techniques

Abstract

A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.

Claims

1. A method for fabricating multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying film of transfer material, the film of transfer material being characterized in a first state and having a face region;

coupling the film of transfer material to a support member;

attaching the face region of the film of transfer material to the support member;

removing the donor substrate from the film of material to expose a backside region and free the film of transfer material from the donor substrate while the film of transfer material remains affixed to the support member;

processing the film of material using the support member from the first state to a second state, the second state being characterized as a stressed state;

attaching the backside region of the film of material in the second state, while being affixed to the support member, to a handle substrate; and

releasing the support member from the film of transfer material to provide the handle substrate with an overlying film of transfer material.

2. The method of claim 1 wherein the first state is characterized as a relaxed state.

3. The method of claim 1 wherein the attaching the face region comprises a bonding process to bond the face region to the support member.

4. The method of claim 1 wherein the attaching the backside region comprises a bonding process to bond the backside region to the handle substrate.

5. The method of claim 1 wherein the film of transfer material is epitaxial silicon.

6. The method of claim 1 wherein the film of transfer material in the stressed state comprises epitaxial silicon.

7. The method of claim 1 wherein the donor substrate comprises a silicon on insulator substrate.

8. The method of claim 1 wherein the processing comprises expanding the film of material from the first state to the second state.

9. The method of claim 1 wherein the processing comprises compressing the film of material from the first state to the second state.

10. The method of claim 8 wherein the processing is provided by thermal energy, electrical energy, mechanical energy, or chemical energy.

11. The method of claim 9 wherein the processing is provided by thermal energy, electrical energy, mechanical energy, or chemical energy.

12. The method of claim 1 wherein the attaching the backside region with the handle substrate is provided using an oxide layer.

13. The method of claim 1 wherein the attaching the backside region with the handle substrate is provided using a glue layer.

14. The method of claim 1 wherein the attaching the backside region with the handle substrate is provided using a spin on glass layer.

15. The method of claim 1 wherein the film of transfer material comprises a material selected from silicon, germanium, gallium arsenide, carbon, III-V materials, II-VI materials, and optically active materials.

16. The method of claim 1 wherein the support member comprises a thermal block.

17. The method of claim 1 wherein the support member comprises a mechanical block.

18. The method of claim 1 wherein the support member comprises a plastic, ceramic, metal, glass, dielectric, a chemically reactive material, or a piezoelectric material.

19. A method for fabricating multi-layered substrates, the method comprising:

providing a donor substrate comprising a thickness of a film of transfer material, the film of transfer material being characterized in a first state and having a face region;

temporarily affixing the face region of the film of transfer material to a support member;

removing the donor substrate from the film of material to expose a backside region and free the film of transfer material from the donor substrate while the face region of the film of transfer material remains temporarily affixed to the support member;

processing the film of material using the support member from the first state to a second state, the second state being characterized as a stressed state;

attaching the backside region of the film of material in the second state, while being affixed to the support member, to a handle substrate; and

releasing the support member from the film of transfer material to provide the handle substrate with an overlying film of transfer material.

20. The method of claim 19 wherein the processing comprises expanding the support member from a first state to a second state to cause the firm of material to be changed from the first state to the second state.

21. The method of claim 19 wherein the processing comprises bending the support substrate about a bend radius to cause the film of material to be changed from the first state to the second state.

22. The method of claim 21 wherein bending is about an axis parallel to a diameter region of the film of material.

23. The method of claim 19 wherein the attaching occurs by contacting an end region of the backside region of the film of material to a first portion of the handle substrate, while other portions of the backside region are free from contact to other portions of the handle substrate, to join the end region of the backside region to the first portion of the handle substrate and continuing to join the other portions of the handle substrate to the other portions of the film of material using a rolling action from the first portion of the film of material to other portions of the film of material.

24. A method for fabricating multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying film of material, the film of material being characterized in a relaxed state, the film of material having a face region;

coupling the film of material to a support member;

attaching the face region of the film of material to the support member;

releasing the donor substrate from the film of material to expose a backside region and free the film of material from the donor substrate while the film of material remains affixed to the support member;

expanding the film of material using the support member from the first state that is characterized by the relaxed state to a second state, the second state being characterized as a stressed state;

attaching the backside region of the film of material in the second state, while being affixed to the support member, to a handle substrate; and

releasing the support member from the film of transfer material in the second state;

providing the handle substrate comprising the film of material in the stressed state; and

processing one or more regions on the film of material in the stressed state.

25. The method of claim 24 wherein the donor substrate comprising a silicon on insulator substrate.

26. The method of claim 24 wherein the attaching the face region comprises a bonding process to bond the face region to the support member.

27. The method of claim 24 wherein the attaching the backside region comprises a bonding process to bond the backside region to the handle substrate.

28. The method of claim 24 wherein the film of material is epitaxial silicon.

29. The method of claim 24 wherein the film of material in the stressed state comprises epitaxial silicon.

30. The method of claim 24 wherein the donor substrate comprises a substrate on insulator substrate.

31. The method of claim 24 wherein the expanding is provided by thermal energy, electrical energy, mechanical energy, or chemical energy.

32. The method of claim 24 wherein the attaching the backside region with the handle substrate is provided using an oxide layer.

33. The method of claim 24 wherein the attaching the backside region with the handle substrate is provided using a glue layer.

34. The method of claim 24 wherein the attaching the backside region with the handle substrate is provided using a spin on glass layer.

35. The method of claim 24 wherein the film of material comprises a material selected from silicon, germanium, gallium arsenide, carbon, III-V materials, II-VI materials, and optically active materials.

36. The method of claim 24 wherein the support member comprises a thermal block.

37. The method of claim 24 wherein the support member comprises a mechanical block.

38. The method of claim 24 wherein the support member comprises a plastic, ceramic, metal, glass, dielectric, a chemically reactive material, or a piezoelectric material.