Method for filling a contact hole and integrated circuit arrangement with contact hole

• US 7,390,737 B2
• Filed: 03/17/2003
• Issued: 06/24/2008
• Est. Priority Date: 04/29/2002
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Schuderer, Berthold, Prügl, Klemens, Förster, Jürgen
• Primary Examiner(s): Geyer; Scott B.
• Assistant Examiner(s): Ullah; Elias
• Application Number:
  US10/511,851
• Publication Number:
  US 20060024946A1
• Time in Patent Office: 1,926 Days
• Field of Search: 438/629, 257/E21.507
• US Class Current: 438/629
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

Claims

1. A method for filling a contact hole, comprising:

depositing a base layer in at least one contact hole under a protective gas atmosphere,

wherein the base layer comprises titanium nitride;

depositing a covering layer under gaseous nitrogen atmosphere in the contact hole after depositing the base layer

wherein the covering layer comprises titanium nitride, and

wherein depositing the base layer under a protective gas substantially prevents the formation of nitride compounds in the titanium nitride at the bottom of the contact hole by reaction with nitrogen contained in the gaseous nitrogen; and

depositing a contact hole filling material comprising tungsten in the contact hole after depositing the covering layer,

wherein the covering layer at the bottom of the contact hole, has a thickness of less than about 10 nm.

2. The method according to claim 1, wherein the base layer or the covering layer or both are deposited by directional sputtering.

3. The method according to claim 2 wherein depositing a base layer comprises sputtering the base layer from the surface of a sputtering target, that is nitrided before depositing the base layer.

4. The method according to claim 1, further comprising depositing an intermediate layer by directional sputtering in the contact hole after depositing the base layer and before depositing the covering layer wherein at least about eighty percent of the atoms of the intermediate layer comprise titanium atoms.

5. The method according to claim 4, wherein depositing the base layer and the covering layer and the intermediate layer comprises sputter deposition using the same sputtering target.

6. The method according to claim 4, wherein depositing the base layer and the intermediate layer, comprises forming a composite layer at the bottom surface of the contact hole having a thickness of less than about 5 nm.

7. The method according to claim 1, wherein depositing an intermediate layer comprises forming at least one region by sputtering from a nitride-free surface of a sputtering target under a protective gas atmosphere.

8. The method according to claim 1 further comprising forming the contact hole in a dielectric layer to expose an electrically conductive connecting section, wherein the connecting section comprises one of aluminum or an aluminum alloy as a main constituent.

9. The method according to claim 8, further comprising forming an auxiliary layer or the electrically conductive connecting section and etching a plurality of contact holes in the dielectric layer, wherein the electrically conductive auxiliary layer is used as a stop layer during the etching.

10. The method according to claim 1 wherein depositing a contact hole filling material is deposited comprises depositing using tungsten hexafluoride.

11. The method according to claim 1 further comprising forming the contact hole to have a diameter of less than about 1 μ

m, and to a depth of greater than 500 nm.

12. An integrated comprising:

at least one contact hole, in which a base layer and a covering layer comprising titanium nitride are arranged,

wherein the base layer adjoins a connecting section comprising one of substantially nitride-free aluminium or an aluminium alloy arranged between the connecting section and the base layer, and

wherein the contact hole contains a filling material comprising tungsten, and

wherein the covering layer at a bottom of the contact hole has a thickness of less than about 10 nm.

13. The integrated circuit according to claim 12 further comprising an intermediate layer arranged between the base layer and the covering layer, wherein at least about eighty percent of the atoms of the intermediate layer comprise titanium atoms.

14. The integrated circuit according to claim 13, wherein the base layer and the intermediate layer comprise a composite layer at a bottom surface of the contact hole having a thickness of less than about 5 nm.