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Semiconductor device forming method

  • US 7,391,051 B2
  • Filed: 12/30/2005
  • Issued: 06/24/2008
  • Est. Priority Date: 03/12/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    an active matrix portion formed over the substrate; and

    a CPU formed over the substrate and operationally connected to the active matrix portion, each of the active matrix portion and the CPU comprising at least one thin film transistor comprising a semiconductor island as an active layer,wherein said semiconductor island comprises crystalline silicon and has a crystal growth direction approximately aligned with <

    111>

    axis of the crystalline silicon.

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