High voltage silicon carbide devices having bi-directional blocking capabilities
First Claim
1. A high voltage silicon carbide (SiC) device, comprising:
- a first SiC layer having a first conductivity type on a first surface of a voltage blocking SiC substrate having a second conductivity type;
a first region of SiC on the first SiC layer and having the second conductivity type;
a second region of SiC in the first SiC layer, having the first conductivity type and being adjacent to the first region of SiC;
a second SiC layer having the first conductivity type on a second surface, opposite the first surface, of the voltage blocking SiC substrate; and
first and second contacts on the first region of SiC and the second SiC layer, respectively.
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Accused Products
Abstract
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
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Citations
18 Claims
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1. A high voltage silicon carbide (SiC) device, comprising:
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a first SiC layer having a first conductivity type on a first surface of a voltage blocking SiC substrate having a second conductivity type; a first region of SiC on the first SiC layer and having the second conductivity type; a second region of SiC in the first SiC layer, having the first conductivity type and being adjacent to the first region of SiC; a second SiC layer having the first conductivity type on a second surface, opposite the first surface, of the voltage blocking SiC substrate; and first and second contacts on the first region of SiC and the second SiC layer, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A silicon carbide (SiC) thyristor, comprising:
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a first SiC layer having a first conductivity type on a first surface of a voltage blocking SIC substrate having a second conductivity type; a SiC anode region on the first SiC layer and having the second conductivity type; a SiC gate region in the first SiC layer, having the first conductivity type and being adjacent to the SiC anode region; a SiC cathode layer having the first conductivity type on a second surface, opposite the first surface, of the voltage blocking SiC substrate; and an anode contact, a gate contact and a cathode contact on the SiC anode region, the SiC gate region and the SiC cathode layer, respectively. - View Dependent Claims (15, 16)
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17. A high voltage silicon carbide (SiC) device, comprising:
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a first SiC layer having a first conductivity type on a first surface of a voltage blocking SiC epilayer having a second conductivity type; a first region of SiC on the first SiC layer and having the second conductivity type; a second region of SIC in the first SiC layer, having the first conductivity type and being adjacent to the first region of SiC; a second SiC layer having the first conductivity type on a second surface, opposite the first surface, of the voltage blocking SiC epilayer; and first and second contacts on the first region of SiC and the second SiC layer, respectively.
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18. A silicon carbide (SiC) thyristor, comprising:
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a first SiC layer having a first conductivity type on a first surface of a voltage blocking SiC epilayer having a second conductivity type; a SiC anode region on the first SiC layer and having the second conductivity type; a SiC gate region in the first SiC layer, having the first conductivity type and being adjacent to the SiC anode region; a SiC cathode layer having the first conductivity type on a second surface, opposite the first surface, of the voltage blocking SiC epilayer; and an anode contact, a gate contact and a cathode contact on the SiC anode region, the SiC gate region and the SiC cathode layer, respectively.
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Specification