Method for manufacturing an electro-optical device

• US 7,393,707 B2
• Filed: 03/22/2005
• Issued: 07/01/2008
• Est. Priority Date: 06/04/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Yamamoto, Kunitaka, Koyama, Jun, Yamazaki, Shunpei
• Primary Examiner(s): SARKAR, ASOK K
• Application Number:
  US11/085,034
• Publication Number:
  US 20050208863A1
• Time in Patent Office: 1,197 Days
• Field of Search: 438/29, 438/34, 257/E21.024, 257/E21.033, 257/E21.041
• US Class Current: 438/29
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8794 Arrangements for heating and cooling
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/146 poly N-vinylcarbazol; Derivatives thereof
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/346 : comprising platinum
• CPC Class Codes: H10K 85/631 : Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 : Aromatic compounds comprising a hetero atom

Abstract

An object of the present invention is to provide an EL display device having high operation performance and reliability.

A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Claims

1. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method;

forming a second electrode covering the bank and the EL layer; and

forming a third insulating film covering the second electrode,

wherein the EL layer is disposed adjacent to a side edge of the bank, and wherein the EL layer does not extend beyond the side edge of the bank.

2. The method according to claim 1, wherein the third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

3. The method according to claim 1, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

4. The method according to claim 1, wherein the first electrode is a pixel electrode.

5. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method; and

forming a second electrode covering the bank and the EL layer,

wherein the EL layer is disposed adjacent to a side edge of the bank,

wherein the EL layer does not extend beyond the side edge of the bank, and

wherein the EL layer and the second electrode are formed continuously without exposure to the air.

6. The method according to claim 5, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

7. The method according to claim 5, wherein the first electrode is a pixel electrode.

8. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, aver the second insulating film;

forming an EL layer by ink jet method;

forming a second electrode covering the bank and the EL layer; and

forming a third insulating film covering the second electrode,

wherein the EL layer is disposed adjacent to a side edge of the bank,

wherein the EL layer does not extend beyond the side edge of the bank, and

wherein the EL layer, the second electrode, and the third insulating film are formed continuously without exposure to the air.

9. The method according to claim 8, wherein the third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

10. The method according to claim 8, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

11. The method according to claim 8, wherein the first electrode is a pixel electrode.

12. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method; and

forming a second electrode covering the bank and the EL layer;

wherein a side surface of the bank is in contact with a side edge of the EL layer.

13. The method according to claim 12, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

14. The method according to claim 12, wherein the first electrode is a pixel electrode.

15. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method;

forming a second electrode covering the bank and the EL layer; and

forming a third insulating film covering the second electrode,

wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, and

wherein the EL layer does not extend beyond the side edge of the bank.

16. The method according to claim 15, wherein the third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

17. The method according to claim 15, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

18. The method according to claim 15, wherein the first electrode is a pixel electrode.

19. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method; and

forming a second electrode covering the bank and the EL layer;

wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode,

wherein the EL layer is disposed adjacent to a side edge of the bank,

wherein the EL layer does not extend beyond the side edge of the bank, and

wherein the EL layer and the second electrode are formed continuously without exposure to the air.

20. The method according to claim 19, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital cameras a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

21. The method according to claim 19, wherein the first electrode is a pixel electrode.

22. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method;

forming a second electrode covering the bank and the EL layer; and

forming a third insulating film covering the second electrode,

wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode,

wherein the EL layer is disposed adjacent to a side edge of the bank,

wherein the EL layer does not extend beyond the side edge of the bank, and

wherein the EL layer, the second electrode, and the third insulating film are formed continuously without exposure to the air.

23. The method according to claim 22, wherein the third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

24. The method according to claim 22, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

25. The method according to claim 22, wherein the first electrode is a pixel electrode.

26. A method of manufacturing a light emitting device comprising:

forming a thin film transistor over a substrate;

forming a first insulating film comprising an organic resin over the thin film transistor;

forming a second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon over the first insulating film;

forming a first electrode electrically connected to the thin film transistor, over the second insulating film, and in contact with the second insulating film so as to cover the first insulating film;

forming a bank covering an edge of the first electrode, over the second insulating film;

forming an EL layer by ink jet method;

forming a second electrode covering the bank and the EL layer; and

wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a bole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode,

wherein a side surface of the bank is in contact with a side edge of the EL layer.

27. The method according to claim 26, wherein the light emitting device is incorporated into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile telephone, an electronic book, an image playback device, and a car audio system.

28. The method according to claim 26, wherein the first electrode is a pixel electrode.