Multi-layer printed circuit board comprising a through connection for high frequency applications

• US 7,394,027 B2
• Filed: 07/13/2005
• Issued: 07/01/2008
• Est. Priority Date: 12/17/2004
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Huschka, Andreas, Kaluzni, Heiko
• Primary Examiner(s): Norris; Jeremy C
• Application Number:
  US11/180,756
• Publication Number:
  US 20060131611A1
• Time in Patent Office: 1,084 Days
• Field of Search: 174262-266, 361792-795, 298/30, 298/40, 298/42
• US Class Current: 174/262
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2223/6622 Coaxial feed-throughs in active or passive substrates
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/10 Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H05K 1/0222 : for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
• CPC Class Codes: H05K 1/0251 : related to vias or transitions between vias and transmission lines
• CPC Class Codes: H05K 1/0298 : Multilayer circuits
• CPC Class Codes: H05K 1/113 : Via provided in pad; Pad over filled via
• CPC Class Codes: H05K 2201/09536 : Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
• CPC Class Codes: H05K 2201/09618 : Via fence, i.e. one-dimensional array of vias
• CPC Class Codes: H05K 2201/09627 : Special connections between adjacent vias, not for grounding vias redundant conductors or connections H05K2201/0979
• CPC Class Codes: H05K 2201/09809 : Coaxial layout reduction of cross-talk, noise or interference by printed shielding conductors for shielding around a single via or around a group of vias H05K1/0222
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: Y10T 29/49126 : Assembling bases

Abstract

A high frequency multi-layer printed circuit board, according to the present invention, comprises a through connection having an impedance adapting structure surrounding the through connection and enabling an adjustment of the characteristic impedance of the through connection to a desired value. Thus, high frequency signals may be led through the printed circuit board with reduced signal deformation. The high frequency multi-layer printed circuit board is applicable for high frequency signals up to the GHz-range.

Claims

1. A high frequency multi-layer printed circuit board, comprising:

a layer stack comprising a first metal-comprising layer, a second metal-comprising layer,

a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; and

a transition structure comprising;

a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer;

an impedance adapting structure surrounding said through connection at least partially and providing a characteristic impedance of said transition structure, said characteristic impedance being adapted to a desired impedance value; and

an outer via connecting said through connection to a structure disposed on said first outer metal-comprising layer.

2. The high frequency multi-layer printed circuit board of claim 1, wherein said impedance adapting structure is substantially coaxially aligned to said through connection and provides said desired impedance value of said characteristic impedance of said transition structure by an adjusted inner diameter of said impedance adapting structure.

3. The high frequency multi-layer printed circuit board of claim 1, wherein said impedance adapting structure is formed by substantially concentric metal-free regions surrounded by metal-containing regions, said metal-free regions being substantially coaxially aligned to said through connection and having a diameter being adapted to said desired impedance value.

4. The high frequency multi-layer printed circuit board of claim 3, further comprising:

at least one metal-comprising inner layer disposed between said first and second metal-comprising layers;

wherein said first dielectric layer comprises at least two dielectric layers separated by said metal-comprising inner layer;

said through connection extending from said first metal-comprising layer through said at least two dielectric layers and said at least one metal-comprising inner layer to said second metal-comprising layer; and

wherein said impedance adapting structure is formed in said inner metal-comprising layer by a substantially concentric metal-free region surrounded by a metal-containing region, said metal-free region being substantially coaxially aligned to said through connection and having a diameter being adapted to said desired impedance value.

5. The high frequency multi-layer printed circuit board of claim 3, further comprising:

at least two metal-comprising inner layers disposed between said first and second metal-comprising layers;

wherein said first dielectric layer comprises at least three dielectric layers separated by at least one of said at least two metal-comprising inner layers, respectively;

said through connection extending from said first metal-comprising layer through said at least two metal-comprising inner layers and said at least three dielectric layers to said second metal-comprising layers; and

wherein said impedance adapting structure is formed between at least two of said at least two metal-comprising inner layers by a plurality of coaxial vias arranged on a substantially concentric substantially circular line that is substantially coaxially aligned to said through connection.

6. The high frequency multi-layer printed circuit board of claim 5, wherein said coaxial vias are equidistantly arranged on said substantially circular line.

7. The high frequency multi-layer printed circuit board of claim 5, wherein said coaxial vias are comprised of eight coaxial vias.

8. The high frequency multi-layer printed circuit board of claim 3, wherein said metal-containing regions surrounding said substantially concentric metal-free regions are electrically connected to a ground potential.

9. The high frequency multi-layer printed circuit board of claim 3, wherein said through connection is electrically connected to at least one microstrip line.

10. The high frequency multi-layer printed circuit board of claim 3, wherein said through connection is electrically connected by a bump structure.

11. The high frequency multi-layer printed circuit board of claim 1, wherein said at least one dielectric layer comprises FR4.

12. The high frequency multi-layer printed circuit board of claim 1, wherein said desired impedance value is approximately 50 Ω

.

13. A high frequency device, comprising:

an integrated high frequency circuit die comprising a high frequency terminal; and

a high frequency multi-layer printed circuit board comprising a transition structure, wherein the integrated high frequency circuit die is mounted on said high frequency multi-layer printed circuit board and said high frequency terminal is connected to said transition structure,

wherein said high frequency multi-layer printed circuit board comprises;

a layer stack comprising a first metal-comprising layer, a second metal-comprising layer, a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; and

said transition structure comprises;

a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer;

an impedance adapting structure surrounding said through connection at least partially and providing a characteristic impedance of said transition structure, said characteristic impedance being adapted to a desired impedance value; and

an outer via connecting said through connection said high frequency terminal.

14. A method of manufacturing a high frequency multi-layer printed circuit board, the method comprising:

choosing a desired impedance value;

forming a layer stack comprising at least a first metal-comprising layer, a second metal-comprising layer, a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer;

forming a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer;

forming an impedance adapting structure surrounding said through connection at least partially and adapting therewith the characteristic impedance of a transition structure to said desired impedance value, wherein the transition structure is comprised of said through connection and said impedance adapting structure; and

forming an outer via connecting said through connection to a structure disposed on said first outer metal-comprising layer.

15. The method of claim 14, wherein said adapting of said characteristic impedance of said transition structure is performed by adjusting a diameter of said impedance adapting structure.

16. The method of claim 14, wherein forming the through connection and the impedance adapting structure further comprises forming the through connection and the impedance adapting structure to accommodate a signal with a frequency of approximately 1 GHz or higher.