Multi-layer printed circuit board comprising a through connection for high frequency applications
First Claim
Patent Images
1. A high frequency multi-layer printed circuit board, comprising:
- a layer stack comprising a first metal-comprising layer, a second metal-comprising layer,a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; and
a transition structure comprising;
a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer;
an impedance adapting structure surrounding said through connection at least partially and providing a characteristic impedance of said transition structure, said characteristic impedance being adapted to a desired impedance value; and
an outer via connecting said through connection to a structure disposed on said first outer metal-comprising layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A high frequency multi-layer printed circuit board, according to the present invention, comprises a through connection having an impedance adapting structure surrounding the through connection and enabling an adjustment of the characteristic impedance of the through connection to a desired value. Thus, high frequency signals may be led through the printed circuit board with reduced signal deformation. The high frequency multi-layer printed circuit board is applicable for high frequency signals up to the GHz-range.
-
Citations
16 Claims
-
1. A high frequency multi-layer printed circuit board, comprising:
-
a layer stack comprising a first metal-comprising layer, a second metal-comprising layer, a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; and a transition structure comprising; a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer; an impedance adapting structure surrounding said through connection at least partially and providing a characteristic impedance of said transition structure, said characteristic impedance being adapted to a desired impedance value; and an outer via connecting said through connection to a structure disposed on said first outer metal-comprising layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A high frequency device, comprising:
-
an integrated high frequency circuit die comprising a high frequency terminal; and a high frequency multi-layer printed circuit board comprising a transition structure, wherein the integrated high frequency circuit die is mounted on said high frequency multi-layer printed circuit board and said high frequency terminal is connected to said transition structure, wherein said high frequency multi-layer printed circuit board comprises; a layer stack comprising a first metal-comprising layer, a second metal-comprising layer, a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; and said transition structure comprises; a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer; an impedance adapting structure surrounding said through connection at least partially and providing a characteristic impedance of said transition structure, said characteristic impedance being adapted to a desired impedance value; and an outer via connecting said through connection said high frequency terminal.
-
-
14. A method of manufacturing a high frequency multi-layer printed circuit board, the method comprising:
-
choosing a desired impedance value; forming a layer stack comprising at least a first metal-comprising layer, a second metal-comprising layer, a first outer metal-comprising layer, a second outer metal-comprising layer, and a plurality of dielectric layers including at least a first dielectric layer separating said first and second metal-comprising layers, at least a second dielectric layer separating said first metal-comprising layer and said first outer metal-comprising layer, and at least a third dielectric layer separating said second metal-comprising layer and said second outer metal-comprising layer; forming a through connection extending from said first metal-comprising layer through said first dielectric layer to said second metal-comprising layer; forming an impedance adapting structure surrounding said through connection at least partially and adapting therewith the characteristic impedance of a transition structure to said desired impedance value, wherein the transition structure is comprised of said through connection and said impedance adapting structure; and forming an outer via connecting said through connection to a structure disposed on said first outer metal-comprising layer. - View Dependent Claims (15, 16)
-
Specification