Method of forming stepped structures employing imprint lithography

• US 7,396,475 B2
• Filed: 04/25/2003
• Issued: 07/08/2008
• Est. Priority Date: 04/25/2003
• Status: Expired due to Term

• Current Assignee: Mii Newco, Inc.
• Original Assignee: Molecular Imprints, Inc. (Canon Inc.)
• Inventors: Sreenivasan, Sidlgata V.
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US10/423,642
• Publication Number:
  US 20040211754A1
• Time in Patent Office: 1,901 Days
• Field of Search: 216/2, 216/11, 216/13, 216/17, 216/18, 216/38, 216/39, 216/41, 216/44, 216/47, 216/49, 216/52, 438/700, 438/703, 264/320, 430311-313, 430316-317
• US Class Current: 216/2
• CPC Class Codes: B81C 1/0046 using stamping, e.g. imprinting nanoimprinting for making etch masks G03F7/0002
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C03C 17/002 for flat glass, e.g. float glass
• CPC Class Codes: C03C 23/0005 by irradiation
• CPC Class Codes: C03C 23/002 by ultraviolet light
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: H01L 21/76813 involving a partial via etch
• CPC Class Codes: H01L 21/76817 using printing or stamping techniques

Abstract

The present invention provides a method for forming a stepped structure on a substrate that features transferring, into the substrate, an inverse shape of the stepped structure disposed on the substrate.

Claims

1. A method of forming a stepped-structure on a substrate, said method comprising:

forming, on said substrate, a multi-tiered structure including a patterned layer having protrusions and recessions, and an etch selectivity layer, with said patterned layer being disposed between said substrate and said etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer;

forming a hard mask in areas of said multi-tiered structure in superimposition with said recessions; and

removing, selectively, portions of said multi-tiered structure to expose regions of said substrate in superimposition with said protrusions to form said stepped structure.

2. The method as recited in claim 1 wherein removing further includes forming, in said substrate, a via portion and a trench portion, with dimensions of said via portion being established as a function of dimensions of said protrusions and dimensions of said trench portion being established as a function of dimensions of said recessions.

3. The method as recited in claim 1 wherein removing further includes depositing said multi-layered structure on said substrate by depositing a polymerizable fluid composition on said substrate and contacting said composition with a mold having a relief structure including a shape complementary to said shape of said multi-tiered structure and exposing said composition to actinic radiation to polymerize said composition, defining a polymerized composition and covering said polymerized composition with said etch selectivity layer.

4. The method as recited in claim 1 wherein forming further includes forming said multi-tiered structure from an organic polymerizable material substantially free of silicon and covering said multi-tiered structure with said etch selectivity layer formed from a silicon-containing material.

5. The method as recited in claim 1 wherein forming further includes forming said multi-tiered structure from a material having a polymerizable compound and a surfactant having a surface energy that is less than a surface energy of said polymerizable compound.

6. The method as recited in claim 1 wherein said etch selectivity layer is formed from a material having a polymerizable compound and a surfactant having a surface energy that is lower than a surface energy of said polymerizable compound.

7. The method as recited in claim 1 wherein forming said etch selectivity layer includes spin-coating a silicon-containing material on said multi-tiered structure.

8. The method as recited in claim 1 further including forming, on said substrate, an etch stop layer positioned between said substrate and said multi-tiered structure.

9. The method as recited in claim 2 further including depositing in said via portion and said trench portion, a conductive material.

10. The method as recited in claim 1 wherein said multi-tiered structure includes a stepped recess.

11. The method as recited in claim 1 wherein said multi-tiered structure includes a bi-level protrusion including a projection and shoulders, with said projection having an apex surface and said shoulders being spaced-apart from said apex surface and said substrate.

12. The method as recited in claim 11 further including forming said substrate from a wafer and a film layer and wherein removing further includes exposing regions of said film layer.

13. A method of forming a stepped-structure on a substrate, said method comprising:

creating a multi-layered structure by forming, on said substrate, a multi-tiered patterned layer having protrusions and recessions, and forming, upon said patterned layer, an etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer, said multi-layered structure having a crown surface facing away from said substrate; and

selectively removing portions of said multi-layered structure to expose regions of said substrate in superimposition with said protrusions forming, in said substrate, a via portion and a trench portion.

14. The method as recited in claim 13 further including depositing in said via portion and said trench portion, a conductive material.

15. The method as recited in claim 13 wherein dimensions of said via portion being established as a function of dimensions of said protrusion and dimensions of said trench portion being established as a function of dimensions of said recessions.

16. The method as recited in claim 13 wherein removing further includes exposing regions while forming a hard mask in areas of said etch selectivity layer in superimposition with said recessions.

17. The method as recited in claim 13 wherein forming further includes depositing a polymerizable fluid composition on said substrate and contacting said composition with a mold having a relief to form said patterned layer and exposing said composition to actinic radiation to polymerize said composition.

18. The method as recited in claim 13 wherein forming further includes forming said patterned layered structure from an organic polymerizable material substantially free of silicon and forming said etch selectivity layer from a silicon-containing material.

19. The method as recited in claim 13 wherein forming further includes forming said patterned layer from a material having a polymerizable compound and a surfactant having a surface energy that is less than a surface energy of said polymerizable compound.

20. The method as recited in claim 13 wherein forming further includes disposing said etch selectivity layer by spin-coating a silicon-containing material on said patterned layer.

21. The method as recited in claim 13 further including forming, on said substrate, an etch stop layer positioned between said substrate and said patterned layer.

22. The method as recited in claim 13 wherein said multi-tiered pattern includes a stepped recess.

23. The method as recited in claim 13 wherein said multi-tiered pattern includes a bi-level protrusion including a projection and shoulders, with said projection having an apex surface and said shoulders being spaced-apart from said apex surface and said substrate.

24. The method as recited in claim 23 further including forming said substrate from said wafer and said film layer and wherein removing further includes exposing regions of said film layer.

25. A method of forming a stepped-structure on a substrate, said method comprising:

forming, on said substrate, a multi-tiered structure including a patterned layer having protrusions and recessions, and an etch selectivity layer, with said patterned layer being disposed between said substrate and said etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer; and

removing, selectively, portions of said multi-tiered structure to expose regions of said substrate in superimposition with said protrusions to form said stepped structure having a via portion and a trench portion, with dimensions of said via portion being established as a function of dimension of said protrusions and dimensions of said trench portion being established as a function of dimensions of said recessions.