Integrated released beam layer structure fabricated in trenches and manufacturing method thereof
First Claim
1. A semiconductor structure comprising:
- a semiconductor substrate;
a first trench extending in a first direction, the first trench having walls;
a second trench extending in a second direction, the second trench having walls;
a first conducting layer positioned over the walls of the first and the second trenches at selected locations;
a first beam positioned within the first trench, the first beam being rigidly connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the first trench by a selected distance; and
a second beam positioned within the second trench, the second beam being rigidly connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the second trench by a selected distance.
1 Assignment
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Accused Products
Abstract
A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.
27 Citations
28 Claims
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1. A semiconductor structure comprising:
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a semiconductor substrate; a first trench extending in a first direction, the first trench having walls; a second trench extending in a second direction, the second trench having walls; a first conducting layer positioned over the walls of the first and the second trenches at selected locations; a first beam positioned within the first trench, the first beam being rigidly connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the first trench by a selected distance; and a second beam positioned within the second trench, the second beam being rigidly connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the second trench by a selected distance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An integrated circuit on a semiconductor substrate comprising:
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a sensor including; a trench extending from a first surface into the substrate, the trench having walls, a first conducting layer positioned over the walls of the trench at selected locations, and a beam positioned within the trench, the beam being connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls by a selected distance; and a semiconductor circuit on the substrate having a first node coupled to the first conducting layer and a second node coupled to the beam, the semiconductor circuit configured to detect electrical contact between the beam and the trench. - View Dependent Claims (16, 17)
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18. A semiconductor structure comprising:
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a semiconductor substrate; a first trench extending in a first direction, the first trench having walls; a second trench extending in a second direction, perpendicular to the first direction, the second trench having walls; a first conducting layer positioned over the walls of the first and the second trenches at selected locations; a first beam positioned within the first trench, the first beam being connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the first trench by a selected distance; a second beam positioned within the second trench, the second beam being connected at a first portion thereof to the substrate and being movable at a second portion thereof, the second portion being spaced from the walls of the second trench by a selected distance; and a third beam that is parallel to the surface of the semiconductor substrate having its primary axis of motion perpendicular to the surface of the substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification