Method and structure for implanting bonded substrates for electrical conductivity

• US 7,399,680 B2
• Filed: 11/30/2005
• Issued: 07/15/2008
• Est. Priority Date: 11/24/2004
• Status: Active Grant

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J.
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US11/292,395
• Publication Number:
  US 20060138583A1
• Time in Patent Office: 958 Days
• Field of Search: 438/406, 438/455, 438/456, 438/459, 438/480, 438/514, 438/530, 257/E21.122
• US Class Current: 438/455
• CPC Class Codes: H01L 21/26513 of electrically active species

Abstract

A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.

Claims

1. A process for forming multi-layered substrates, the process comprising:

providing a first substrate, the first substrate comprising a thickness of material to be removed, the thickness of material to be removed comprising a first face region;

joining the first face region of the first substrate to a second face region of a second substrate to form an interface region between the first face region of the first substrate and the second face region of the second substrate;

removing the thickness of material from the first substrate while maintaining attachment of the first face region of the first substrate to the second face region of the second substrate;

forming a masking layer overlying a surface region of the thickness of material to form an exposed region of a portion of the thickness of material;

implanting particles into the exposed region and through a portion of the interface region to form a region of the particles within the vicinity of the portion of the interface region to couple the portion of the thickness of material to the second substrate to cause formation of an implanted region including at least the exposed region and the portion of the thickness of material; and

subjecting at least the implanted region to at least a thermal treatment process to cause crystallization of the implanted region.

2. The process of claim 1 wherein the particles comprise a conductive characteristic at the vicinity of the interface region.

3. The process of claim 1 wherein the particles comprise dopant particles.

4. The process of claim 3 wherein the dopant particles are selected from boron, arsenic, or phosphorus.

5. The process of claim 1 wherein the first substrate is a silicon wafer.

6. The process of claim 5 wherein the silicon wafer is characterized by a major crystallographic plane in the {100} plane.

7. The process of claim 5 wherein the silicon wafer is characterized by a major crystallographic plane in the {110} plane.

8. The process of claim 5 wherein the silicon wafer is characterized by a major crystallographic plane in the {111} plane.

9. The process of claim 1 wherein the region of the particles has a concentration of about 10¹⁸ atoms/cm³ and greater.

10. The process of claim 1 wherein the joining comprises bonding the first face to the second face.

11. The process of claim 1 wherein the joining comprises plasma activated processing at least the first face or the second face.

12. The process of claim 1 wherein the joining comprises bonding the first face to the second face using an oxide material.

13. The process of claim 1 wherein the interface region is characterized by an insulating material.

14. The process of claim 1 wherein the region of particles changes the interface region from an insulating characteristic to a conductive characteristic.

15. The process of claim 1 wherein the implanting is provided using a high energy implanter.

16. The process of claim 1 wherein the interface region comprises a silicon dioxide material.

17. The process of claim 1 wherein the implanting forms a well region in the thickness of material and a portion of the second substrate.

18. The process of claim 1 further comprising forming a plurality of via structures through the interface region to electrically connect the thickness of material to a portion of the second substrate.

19. The process of claim 1 further comprising implanting second particles through the thickness of material to form a well region therein.

20. The process of claim 1 wherein the thickness of material is 8000 Angstroms and less.

21. The process of claim 1 wherein the first substrate comprises a silicon wafer, the silicon wafer is characterized by a first crystalline orientation, and the crystallized portion is characterized by a second crystalline orientation.

22. The process of claim 21 wherein the first crystalline orientation in a major crystallographic plane is the {110} plane, and the second crystalline orientation in a major crystallographic plane is the {100} plane.

23. The process of claim 1 wherein the implanting of the particles is through the portion of the thickness of material and a portion of the first face and a portion of the second face.

24. The process of claim 1 wherein the particles are characterized by a conductive property to provide electrical connection between the thickness of material and a portion of the second substrate.

25. The process of claim 1 wherein the particles comprises a plurality of silicon ions or a plurality of germanium ions.

26. The process of claim 1 wherein the crystallized portion is characterized by an orientation of a predetermined type, the predetermined type being of the second substrate.