Method of forming a structure over a semiconductor substrate
First Claim
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1. A method of forming a structure over a semiconductor substrate, comprising:
- forming a silicon-dioxide-containing layer physically against the semiconductor substrate;
exposing the silicon-dioxide-containing layer to an activated nitrogen species formed from plasma conditions to provide nitrogen within the silicon-dioxide-containing layer, substantially all of the nitrogen within the silicon-dioxide-containing layer being spaced from the substrate;
after the exposing to provide the nitrogen within the silicon-dioxide-containing layer, forming a first layer comprising conductively doped silicon physically against the silicon-dioxide-containing layer, the first layer comprising a first conductivity type; and
forming a second layer comprising conductively doped silicon over the first layer, the second layer comprising a second conductivity type that is different from the first conductivity type.
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Abstract
The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer.
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Citations
30 Claims
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1. A method of forming a structure over a semiconductor substrate, comprising:
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forming a silicon-dioxide-containing layer physically against the semiconductor substrate; exposing the silicon-dioxide-containing layer to an activated nitrogen species formed from plasma conditions to provide nitrogen within the silicon-dioxide-containing layer, substantially all of the nitrogen within the silicon-dioxide-containing layer being spaced from the substrate; after the exposing to provide the nitrogen within the silicon-dioxide-containing layer, forming a first layer comprising conductively doped silicon physically against the silicon-dioxide-containing layer, the first layer comprising a first conductivity type; and forming a second layer comprising conductively doped silicon over the first layer, the second layer comprising a second conductivity type that is different from the first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a structure over a semiconductor substrate, comprising:
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forming a silicon-dioxide-containing layer physically against the semiconductor substrate, the silicon-dioxide-containing layer having an upper portion and a lower portion, the upper portion being spaced from the semiconductor substrate by the lower portion; after forming the silicon-dioxide-containing layer, exposing the silicon-dioxide-containing layer to nitrogen ions to provide nitrogen within only the upper portion of the silicon-dioxide-containing layer; after providing the nitrogen within only the upper portion of the silicon-dioxide-containing layer, forming conductively doped amorphous silicon physically against the upper portion of the silicon-dioxide-containing layer; and oxidizing the conductively doped amorphous silicon. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a structure over a semiconductor substrate, comprising:
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providing a semiconductor substrate comprising a first region and a second region that is different from the first region; forming a silicon-dioxide-containing layer physically against only the first region of the semiconductor substrate, the silicon-dioxide-containing layer comprising an upper surface; exposing the silicon-dioxide-containing layer to nitrogen atoms, and during the exposing, the nitrogen atoms comprising a higher energy state than their ground state to provide nitrogen primarily within the upper surface of the silicon-dioxide-containing layer; forming conductively doped silicon physically against the upper surface of the silicon-dioxide-containing layer and leaving the second region of the semiconductor substrate exposed; and oxidizing the conductively doped silicon and the second region of the semiconductor substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of forming a structure over a semiconductor substrate, comprising:
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forming a silicon-dioxide-containing layer physically against the semiconductor substrate, the silicon-dioxide-containing layer having an upper portion and a lower portion, the upper portion being spaced from the semiconductor substrate by the lower portion; after forming the silicon-dioxide-containing layer, exposing the silicon-dioxide-containing layer to nitrogen ions to provide nitrogen within only the upper portion of the silicon-dioxide-containing layer; after providing the nitrogen within only the upper portion of the silicon-dioxide-containing layer, forming conductively doped amorphous silicon physically against the upper portion of the silicon-dioxide-containing layer; and forming conductive material over the conductively doped amorphous silicon, the conductive material comprising a conductivity type that is different from a conductivity type of the conductively doped amorphous silicon.
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30. A method of forming a structure over a semiconductor substrate, comprising:
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forming a silicon-dioxide-containing layer physically against the semiconductor substrate, the silicon-dioxide-containing layer having an upper portion and a lower portion, the upper portion being spaced from the semiconductor substrate by the lower portion; after forming the silicon-dioxide-containing layer, exposing the silicon-dioxide-containing layer to nitrogen ions to provide nitrogen within only the upper portion of the silicon-dioxide-containing layer; after providing the nitrogen within only the upper portion of the silicon-dioxide-containing layer, forming conductively doped amorphous silicon physically against the upper portion of the silicon-dioxide-containing layer; and wherein the forming of the conductively doped amorphous silicon comprises providing the conductively doped amorphous silicon over a first region of the semiconductor substrate, and further comprising; exposing a second region of the semiconductor substrate, the second region being different from the first region; and oxidizing the conductively doped amorphous silicon and the second region of the semiconductor substrate.
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Specification