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Nitride based hetero-junction field effect transistor

  • US 7,400,001 B2
  • Filed: 11/30/2004
  • Issued: 07/15/2008
  • Est. Priority Date: 09/08/2004
  • Status: Expired due to Fees
First Claim
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1. A hetero-junction field effect transistor, comprising:

  • a high resistance nitride semiconductor layer formed on a substrate;

    an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.3˜

    0.6 mol %;

    an undoped GaN layer formed on the Al-doped GaN layer; and

    an AlGaN layer formed on the undoped GaN layer such that a two-dimensional electron gas (2DEG) layer is formed at an interface between the AlGaN layer and the undoped GaN layer;

    whereinthe undoped GaN layer has a thickness of 0.1˜

    1 μ

    m; and

    the Al-doped GaN layer has a thickness of 0.1˜

    1 μ

    m;

    said hetero-junction field effect transistor further comprising at least one pair of another Al-doped GaN layer and another undoped GaN layer sequentially formed between the Al-doped GaN layer and the high resistance nitride semiconductor layer.

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