ACCUFET with schottky source contact
First Claim
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1. An integrated MOSgated power semiconductor device comprising:
- a graded drift region of one conductivity;
a base region of said one conductivity above said drift region;
a source region of said one conductivity above said base region;
an insulated gate adjacent said base region;
a source contact making ohmic contact with said source region and Schottky contact with said base region;
a substrate of the same conductivity as said drift region, wherein said drift region is formed over said substrate;
a drain contact electrically connected to said substrate; and
an insulated source field electrode adjacent said drift region;
wherein said insulated source field electrode and said insulated gate are disposed in a common trench.
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Abstract
An accumulation mode FET (ACCUFET) having a source contact that makes Schottky contact with the base region thereof.
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Citations
9 Claims
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1. An integrated MOSgated power semiconductor device comprising:
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a graded drift region of one conductivity; a base region of said one conductivity above said drift region; a source region of said one conductivity above said base region; an insulated gate adjacent said base region; a source contact making ohmic contact with said source region and Schottky contact with said base region; a substrate of the same conductivity as said drift region, wherein said drift region is formed over said substrate; a drain contact electrically connected to said substrate; and an insulated source field electrode adjacent said drift region; wherein said insulated source field electrode and said insulated gate are disposed in a common trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated MOSgated power semiconductor device comprising:
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an accumulation mode FET having an insulated gate, a graded drift region, a source contact and a base region; and a Schottky diode, said Schottky diode being formed by a Schottky contact between said source contact and said base region; and an insulated source field electrode adjacent said drift region; wherein said insulated source field electrode and said insulated gate are disposed in a common trench. - View Dependent Claims (9)
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Specification