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Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films

  • US 7,400,030 B2
  • Filed: 01/25/2005
  • Issued: 07/15/2008
  • Est. Priority Date: 01/04/2002
  • Status: Expired due to Fees
First Claim
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1. A semiconductor Schottky contact comprising:

  • a MgxZn1-xO semiconductor epitaxial film having a (11 20) family of planes, grown on a single crystal substrate having an orientation wherein primary symmetric axis (0001) of said MgxZn1-xO semiconductor epitaxial film lies on the surface of said substrate, thereby resulting in zero net charge on said MgxZn1-xO film and zero net dipole moment perpendicular to surface of said MgxZn1-xO film;

    a metal layer deposited on said MgxZn1-xO film to form a Schottky contact, wherein said substrate is R-plane sapphire, (11 20) Al2O3.

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