Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films
First Claim
1. A semiconductor Schottky contact comprising:
- a MgxZn1-xO semiconductor epitaxial film having a (11 20) family of planes, grown on a single crystal substrate having an orientation wherein primary symmetric axis (0001) of said MgxZn1-xO semiconductor epitaxial film lies on the surface of said substrate, thereby resulting in zero net charge on said MgxZn1-xO film and zero net dipole moment perpendicular to surface of said MgxZn1-xO film;
a metal layer deposited on said MgxZn1-xO film to form a Schottky contact, wherein said substrate is R-plane sapphire, (11 20) Al2O3.
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Abstract
In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
12 Citations
24 Claims
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1. A semiconductor Schottky contact comprising:
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a MgxZn1-xO semiconductor epitaxial film having a (11 2 0) family of planes, grown on a single crystal substrate having an orientation wherein primary symmetric axis (0001) of said MgxZn1-xO semiconductor epitaxial film lies on the surface of said substrate, thereby resulting in zero net charge on said MgxZn1-xO film and zero net dipole moment perpendicular to surface of said MgxZn1-xO film;a metal layer deposited on said MgxZn1-xO film to form a Schottky contact, wherein said substrate is R-plane sapphire, (11 2 0) Al2O3. - View Dependent Claims (2, 3)
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4. A semiconductor Schottky diode, comprising:
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a ZnO semiconductor epitaxial film having (11 2 0) family of planes, grown on a single crystal substrate having an orientation wherein primary symmetric axis (0001) of said ZnO semiconductor epitaxial film lies on the surface of said substrate, and wherein the lattice mismatch between said substrate and said ZnO semiconductor film is small, thereby resulting in zero net charge on said ZnO film and zero net dipole moment perpendicular to surface of said ZnO film, wherein the said substrate is R-plane sapphire, (011 2) Al2O3;a metal deposited on said ZnO film to form a Schottky contact; an ohmic metal deposited on said ZnO film to form an ohmic contact; and
having means to being applied as a low leakage and high speed ultraviolet photodetector, wherein said ultraviolet photodetector comprises a circular metal-semiconductor-metal structure having an inner circle pattern of the Schottky contact deposited on said ZnO film having (112 0) family of planes and an outer ring pattern of the ohmic electrode deposited on said ZnO film. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor Schottky diode, comprising:
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a MgxZn1-xO semiconductor film having (11 2 0) family of planes, grown on a single crystal substrate having an orientation wherein primary symmetric axis (0001) of said MgxZn1-xO semiconductor epitaxial film lies on the surface of said substrate, thereby resulting in zero net charge on said MgxZn1-xO film and zero net dipole moment perpendicular to surface of said MgxZn1-xO film;a metal deposited on said MgxZn1-xO film to form a Schottky contact; and an ohmic metal deposited on said MgxZn1-xO film to form an ohmic contact wherein energy bandgap of the MgxZn1-xO film varies with Mg content. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification