Nano-VCSEL device and fabrication thereof using nano-colonnades

• US 7,400,665 B2
• Filed: 03/21/2005
• Issued: 07/15/2008
• Est. Priority Date: 11/05/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Wang, Shih-Yuan, Islam, M. Saif, Beausoleil, Raymond G.
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): CARTER, MICHAEL W
• Application Number:
  US11/084,886
• Publication Number:
  US 20060098705A1
• Time in Patent Office: 1,212 Days
• Field of Search: 372/50.12, 372/50.124, 977/951
• US Class Current: 372/50.124
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 comprising a junction
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/0261 Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/341 Structures having reduced dimensionality, e.g. quantum wires
• CPC Class Codes: H01S 5/3412 quantum box or quantum dash
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate
• CPC Class Codes: H01S 5/423 having a vertical cavity
• CPC Class Codes: Y10S 977/951 Laser

Abstract

A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.

Claims

1. A nano-colonnade vertical cavity surface emitting laser (VCSEL) device comprising:

a first layer having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer;

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion; and

distributed Bragg mirrors adjacent to opposite ends of the nanowire column.

2. The nano-colonnade VCSEL device of claim 1, wherein the distributed Bragg mirrors comprises a first Bragg mirror and a second Bragg mirror, the first layer comprising the first Bragg mirror adjacent to the (111) horizontal surface, the second layer comprising the second Bragg mirror adjacent to the facing horizontal surface, such that the distributed Bragg mirrors form a vertical optical cavity with the nanowire column.

3. The nano-colonnade VCSEL device of claim 2, further comprising a quantum dot integrated in the nanowire column spaced from the first Bragg mirror and the second Bragg mirror.

4. The nano-colonnade VCSEL device of claim 1, wherein the distributed Bragg mirrors comprises a first Bragg mirror and a second Bragg mirror, the nanowire column comprising the first Bragg mirror adjacent to a first end of the nanowire column-near the (111) horizontal surface of the first layer, the nanowire column further comprising the second Bragg mirror adjacent to a second end of the nanowire column near the facing horizontal surface of the second layer, such that the distributed Bragg mirrors form a vertical optical cavity with the nanowire column.

5. The nano-colonnade VCSEL device of claim 4, further comprising a quantum dot integrated in the nanowire column between and spaced from the first Bragg mirror and the second Bragg mirror.

6. The nano-colonnade VCSEL device of claim 5, further comprising an optical pump on the first layer, the optical pump having an output, the output being directed at the nanowire column to optically pump the quantum dot.

7. The nano-colonnade VCSEL device of claim 1, wherein the distributed Bragg mirrors comprises a first set of Bragg reflector layers and a second set of Bragg reflector layers, the first set being integrated into either the first layer or the nanowire column adjacent to the (111) horizontal surface, the second set being integrated into either the second layer or the nanowire column adjacent to the facing horizontal surface, such that the first set of Bragg reflector layers and the second set of Bragg reflector layers delineate a vertical optical cavity with the nanowire column.

8. The nano-colonnade VCSEL device of claim 7, further comprising a quantum dot integrated in the nanowire column spaced from the first set of Bragg reflector layers and the second set of Bragg reflector layers.

9. The nano-colonnade VCSEL device of claim 8, further comprising a distributed feedback (DFB) laser on the (111) horizontal surface of the first layer, the DFB laser having an output directed at the nanowire column, the DFB laser optically pumping the quantum dot.

10. The nano-colonnade VCSEL device of claim 1, further comprising a quantum dot integrated in the nanowire column spaced from and between the distributed Bragg mirrors.

11. The nano-colonnade VCSEL device of claim 1, further comprising an electrical pump to facilitate pumping a laser cavity that is formed by the nanowire column and the distributed Bragg mirrors.

12. The nano-colonnade VCSEL device of claim 11, wherein the electrical pump comprises two or more of the first layer being highly doped, the second layer being highly doped, an electrically conductive contact pad on the (111) horizontal surface and an electrically conductive contact pad on a surface of the second layer opposite the facing surface in a combination that facilitates an electrical connection to the opposite ends of the laser cavity, the electrical connection supporting one or both of an electrical current and an electrical pulse.

13. The nano-colonnade VCSEL device of claim 1, further comprising an optical pump integrated on the first layer to pump a laser cavity formed by the nanowire column and the distributed Bragg mirrors.

14. The nano-colonnade VCSEL device of claim 1, wherein the nanowire column is lattice-matched to one or more of the first layer, the second layer, the insulator support and the distributed Bragg mirrors.

15. The nano-colonnade VCSEL device of claim 1, wherein the first layer is a semiconductor material having a [111]crystal orientation, the second layer being a semiconductor material having any crystal orientation.

16. The nano-colonnade VCSEL device of claim 1, further comprising:

a first contact pad on the (111) horizontal surface of the first layer, the first contact pad being out from under the overhanging portion and being spaced from the nanowire column; and

a second contact pad on a horizontal surface of the second layer opposite the facing horizontal surface, the first contact pad and the second contact pad being electrically conductive.

17. The nano-colonnade VCSEL device of claim 1, wherein the first layer is a semiconductor layer of a semiconductor-on-insulator wafer.

18. The nano-colonnade VCSEL device of claim 1, wherein the second layer overhangs the insulator support on opposite sides of the insulator support to form back-to-back overhanging portions, and wherein the nanowire column extends from the (111) horizontal surface to the facing horizontal surface in each overhanging portion.

19. The nano-colonnade VCSEL device of claim 18, wherein the distributed Bragg mirrors are integrated into the nanowire columns, a first Bragg mirror being adjacent to a first end of the nanowire columns that is adjacent to the (111) horizontal surface, a second Bragg mirror being adjacent to a second end of the nanowire columns that is adjacent to the facing horizontal surface of the overhanging portions.

20. The nano-colonnade VCSEL device of claim 18, further comprising first contact pads on the (111) horizontal surface of the first layer and a second contact pad on the second layer, the first contact pads being out from under the overhanging portions and spaced from the nanowire columns, the second contact pad being on a horizontal surface of the second layer that is opposite the facing horizontal surface, the second contact pad overlying the insulator support between the overhanging portions, the first contact pads and the second contact pad being electrically conductive.

21. The nano-colonnade VCSEL device of claim 1, wherein the second layer with the overhanging portion and the insulator support form a first section, the nano-colonnade VCSEL device further comprising a second section that is a mirror image of the first section on the first layer, the second section comprising a mirror image second layer having an overhanging portion, a mirror image insulator support, and another nanowire column extending from the first layer to the mirror image second layer, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap.

22. The nano-colonnade VCSEL device of claim 1, wherein the second layer with the overhanging portion is partitioned into physically separated segments to form an array of nano-VCSEL devices, a nano-VCSEL device of the array comprising a different segment of the second layer having a respective overhanging portion, the first layer, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment, the nano-VCSEL devices of the array being separately addressable.

23. The nano-colonnade VCSEL device of claim 22, wherein the second layer segments and the insulator support of the array form a first section, the nano-colonnade VCSEL device further comprising a second section that is a mirror image of the first section on the first layer, the second section comprising mirror image second layer segments having respective overhanging portions, a mirror image insulator support, and nanowire columns extending from the first layer to the mirror image second layer segments of the array, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap.

24. The nano-colonnade VCSEL device of claim 1 used in a display, the display comprising a plurality of the VCSEL devices grouped together, such that an emission from a VCSEL device of the plurality stimulates an emission from a proximate VCSEL device of the plurality to produce a brighter light from the grouped plurality than the plurality of VCSEL devices without proximate stimulation.

25. The nano-colonnade VCSEL device of claim 1 used in a display comprising a plurality of the nanowire columns in proximity to each other, such that an emission from a nanowire column of the plurality stimulates an emission from a proximate nanowire column of the plurality to produce a brighter light from the plurality than the plurality of nanowire columns without proximate stimulation.

26. The nano-colonnade VCSEL device of claim 1 used in an optical amplifier, the optical amplifier comprising a semiconductor optical amplifier (SOA) in proximity to the VCSEL device, such that an emission from the VCSEL device interacts with an active material of the SOA to enhance an amplification of light by the SOA.

27. The nano-colonnade VCSEL device of claim 1, wherein a molecule of a foreign substance in proximity to the nanowire column alters an emission from the VCSEL device, the altered emission being detectable, such that the VCSEL device is a single molecule detector.

28. The nano-colonnade VCSEL device of claim 1 used in a display light source, the display light source comprising a white light emitting material in proximity to the VCSEL device, such that an emission from the VCSEL device stimulates the material to produce a brighter white light than the material produces without the VCSEL device stimulation, wherein the nanowire column of the VCSEL device comprises a semiconductor material that produces a light emission having a wavelength that is short relative to a wavelength of white light, the short wavelength light emission stimulating the white light emitting material.

29. A nano-colonnade vertical cavity surface emitting laser (VCSEL) array device comprising:

a first layer having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, back-to-back portions of the second layer overhanging the insulator support, such that a horizontal surface of the back-to-back overhanging portions is spaced from and faces the (111) horizontal surface of the first layer;

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of each overhanging portion; and

distributed Bragg mirrors adjacent to opposite ends of the nanowire columns.

30. The nano-colonnade VCSEL array device of claim 29, wherein the distributed Bragg mirrors comprises a first set of Bragg reflector layers and a second set of Bragg reflector layers, the first set being integrated into either the first layer or the nanowire column adjacent to the (111) horizontal surface, the second set being integrated into either the second layer or the nanowire column adjacent to the facing horizontal surface, such that the first set of Bragg reflector layers and the second set of Bragg reflector layers delineate a vertical optical cavity with the nanowire column.

31. The nano-colonnade VCSEL array device of claim 29, further comprising first contact pads on the (111) horizontal surface of the first layer and a second contact pad on the second layer, the first contact pads being located out from under the overhanging portions and spaced from the nanowire columns, the second contact pad being on a horizontal surface of the second layer that is opposite the facing horizontal surface, the second contact pad overlying the insulator support between the overhanging portions, the first contact pads and the second contact pad being electrically conductive.

32. A nano-colonnade vertical cavity surface emitting laser (VCSEL) device with an integral pump comprising:

a first layer having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer;

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, the nanowire column comprising a quantum dot;

distributed Bragg mirrors adjacent to opposite ends of the nanowire column; and

an optical pump on the first layer, the optical pump having an output directed at the nanowire column, the optical pump optically pumping the quantum dot.

33. The nano-colonnade VCSEL device with an integral pump of claim 32, wherein the distributed Bragg mirrors comprises a first set of Bragg reflector layers and a second set of Bragg reflector layers, the first set being integrated into either the first layer or the nanowire column adjacent to the (111) horizontal surface, the second set being integrated into either the second layer or the nanowire column adjacent to the facing horizontal surface, such that the first set of Bragg reflector layers and the second set of Bragg reflector layers delineate a vertical laser cavity with the nanowire column.

34. The nano-colonnade VCSEL device with an integral pump of claim 32, further comprising electrical connections between the first layer and one or both of the second layer and the optical pump, such that electrical connectivity is established to selectively electrically pump one or both of the quantum dot and the optical pump.

35. The nano-colonnade VCSEL device with an integral pump of claim 32, wherein the optical pump comprises an edge emitting laser formed on or attached to the (111) horizontal surface.

36. A nano-colonnade vertical cavity surface emitting laser (VCSEL) device comprising:

a first layer having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer;

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion; and

means for delineating a vertical optical cavity with the nanowire column.

37. The nano-colonnade VCSEL device of claim 36, wherein the means for delineating comprises distributed Bragg mirrors adjacent to opposite ends of the nanowire column, the distributed Bragg mirrors comprising a first set of Bragg reflector layers and a second set of Bragg reflector layers, the first set being integrated into either the first layer or the nanowire column adjacent to the (111) horizontal surface, the second set being integrated into either the second layer or the nanowire column adjacent to the facing horizontal surface.

38. A nano-colonnade VCSEL device with an integral pump comprising:

a first layer having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer;

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, the nanowire column comprising means for producing single photon emissions;

distributed Bragg mirrors adjacent to opposite ends of the nanowire column to form a nanowire laser cavity; and

means for pumping a laser cavity.

39. The nano-colonnade VCSEL device with an integral pump of claim 38, wherein the means for producing single photon emissions is a quantum dot integrated into the nanowire column, and wherein the means for pumping comprises one or both of means for optically pumping the quantum dot and means for electrically pumping one or both of the nanowire laser cavity and the optical pumping means.

40. The nano-colonnade VCSEL device with an integral pump of claim 38, wherein the means for pumping comprises means for optically pumping on the (111) horizontal surface, the means for optically pumping comprising an edge emitting laser having an output directed at the nanowire laser cavity that optically pumps the means for producing single photon emissions.

41. The nano-colonnade VCSEL device with an integral pump of claim 40, wherein the means for pumping further comprises means for electrically pumping that selectively pumps one or both of a laser cavity of the edge emitting laser and the nanowire laser cavity.