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Fingerprint sensor and fabrication method thereof

  • US 7,400,750 B2
  • Filed: 08/30/2004
  • Issued: 07/15/2008
  • Est. Priority Date: 11/18/2003
  • Status: Expired due to Fees
First Claim
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1. A fingerprint sensor using ultrasonic waves, comprising:

  • a complementary metal-oxide semiconductor structure which is formed on a substrate that is doped with a first type dopant;

    an insulating layer which is formed on the complementary metal-oxide semiconductor structure;

    a lower electrode which is formed in a central portion of the insulating layer;

    a piezoelectric region which is formed on the lower electrode;

    an upper electrode which is formed on the piezoelectric layer; and

    a fingerprint contact layer which is formed to cover a portion of an upper surface of the insulating layer on which the lower electrode has not been formed, the lower electrode, the piezoelectric region, and the upper electrode.

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