Fingerprint sensor and fabrication method thereof
First Claim
1. A fingerprint sensor using ultrasonic waves, comprising:
- a complementary metal-oxide semiconductor structure which is formed on a substrate that is doped with a first type dopant;
an insulating layer which is formed on the complementary metal-oxide semiconductor structure;
a lower electrode which is formed in a central portion of the insulating layer;
a piezoelectric region which is formed on the lower electrode;
an upper electrode which is formed on the piezoelectric layer; and
a fingerprint contact layer which is formed to cover a portion of an upper surface of the insulating layer on which the lower electrode has not been formed, the lower electrode, the piezoelectric region, and the upper electrode.
3 Assignments
0 Petitions
Accused Products
Abstract
Provided are a fingerprint sensor and a fabrication method thereof. The fingerprint sensor includes: a complementary metal-oxide semiconductor structure which is formed on a substrate that is doped with a first type dopant; an insulating layer which is formed on the complementary metal-oxide semiconductor structure; a lower electrode which is formed in a central portion of the insulating layer; a piezoelectric region which is formed on the lower electrode; an upper electrode which is formed on the piezoelectric layer; and a fingerprint contact layer which is formed to cover a portion of an upper surface of the insulating layer on which the lower electrode has not been formed, the lower electrode, the piezoelectric region, and the upper electrode.
-
Citations
12 Claims
-
1. A fingerprint sensor using ultrasonic waves, comprising:
-
a complementary metal-oxide semiconductor structure which is formed on a substrate that is doped with a first type dopant; an insulating layer which is formed on the complementary metal-oxide semiconductor structure; a lower electrode which is formed in a central portion of the insulating layer; a piezoelectric region which is formed on the lower electrode; an upper electrode which is formed on the piezoelectric layer; and a fingerprint contact layer which is formed to cover a portion of an upper surface of the insulating layer on which the lower electrode has not been formed, the lower electrode, the piezoelectric region, and the upper electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of fabricating a fingerprint sensor using ultrasonic waves, comprising:
-
forming a complementary metal-oxide semiconductor structure on a substrate that is doped with a first type dopant; forming an insulating layer on the complementary metal-oxide semiconductor structure and sequentially forming a lower electrode, a piezoelectric region, and an upper electrode on the insulating layer; removing side portions of the lower electrode, the piezoelectric region, and the upper electrode; and forming a fingerprint contact layer to cover a portion of an upper surface of the insulating layer, the lower electrode, the piezoelectric region, and the upper electrode. - View Dependent Claims (10, 11, 12)
-
Specification