Integrated micro electro-mechanical system and manufacturing method thereof

• US 7,402,449 B2
• Filed: 08/23/2005
• Issued: 07/22/2008
• Est. Priority Date: 02/25/2005
• Status: Active Grant

• Current Assignee: Hitachi Astemo Ltd. (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd.
• Inventors: Yokoyama, Natsuki, Fukuda, Hiroshi, Matsumura, Takafumi, Fujimori, Tsukasa, Hanaoka, Yuko
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): Nguyen; Thinh T
• Application Number:
  US11/208,740
• Publication Number:
  US 20060205106A1
• Time in Patent Office: 1,064 Days
• Field of Search: 438/50, 438/51, 438/52, 438/53, 438/618, 438/619, 438/622, 257/415, 257/416, 257/599, 257/600
• US Class Current: 438/53
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Abstract

In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Claims

1. A manufacturing method of an integrated micro electro-mechanical system, in which a micro machine formed by using a manufacturing technology of a semiconductor integrated circuit and a semiconductor integrated circuit are formed on a semiconductor substrate, said method comprising the steps of:

(a) forming a mechanical structure which is a part of said micro machine, said mechanical structure including a fixed part which is elastically un-deformable and fixed to an interlayer dielectric layer, a movable part which is movable in a cavity, and an elastically deformable part which connects said fixed part with said movable part, a width of said fixed part is wider than a width of said elastically deformable part in plan view;

(b) forming the interlayer dielectric layer covering said mechanical structure, said interlayer dielectric layer being formed as a part of an interconnect of said semiconductor integrated circuit;

(c) forming said cavity in which said mechanical structure is placed by forming a film having holes on said interlayer dielectric layer which covers said mechanical structure and etching said interlayer dielectric layer around said mechanical structure through said holes to form said cavity; and

(d) sealing said cavity by sealing only said holes, wherein said step (a), said step (b), said step (c) and said step (d) are performed by using a technology for forming an interconnect of said semiconductor integrated circuit.

2. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said step (a), said mechanical structure is formed from the same layer as the interconnect which constitutes said semiconductor integrated circuit.

3. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said step (a), said movable part of said mechanical structure is formed from plural interconnect layers which constitute said semiconductor integrated circuit.

5. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein said micro machine is formed and stacked above a MOSFET which constitutes said semiconductor integrated circuit.

6. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein said step (c) includes the steps of:

(c1) forming a film having first holes and a second hole larger than said first holes therein on said interlayer dielectric;

(c2) forming said cavity by etching said interlayer dielectric around said mechanical structure through said first holes and said second hole;

(c3) filling said first holes with a dielectric while keeping said second hole open; and

(c4) removing said dielectric formed by said step (c3) on said mechanical structure,

wherein, in said step (d), said second hole is sealed.

7. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said step (a), said fixed part, said elastically deformable part and said moveable part are formed on an identical level and identically thick.

8. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said steps (b)-(d), said fixed part, said elastically deformable part and said moveable part remain on an identical level and identically thick.

9. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said step (a), said movable part is formed to directly connect only with said elastically deformable part to provide a free end which dangles freely in said cavity.

10. The manufacturing method of an integrated micro electro-mechanical system according to claim 1,

wherein, in said step (a), said elastically deformable part is formed narrower than said fixed part and said moveable part, and shaped spiral to position the fixed part on an edge of said mechanical structure and the moveable part at a center of said mechanical structure.

4. A manufacturing method of an integrated micro electro-mechanical system in which a micro machine formed by using a manufacturing technology of a semiconductor integrated circuit and a semiconductor integrated circuit are formed on a semiconductor substrate, said method comprising:

(a) forming a mechanical structure which is a part of said micro machine;

(b) forming an interlayer dielectric layer which covers said mechanical structure, said interlayer dielectric being formed between interconnects of said semiconductor integrated circuit;

(c) forming a cavity in which said mechanical structure by forming a film having holes on said interlayer dielectric layer which covers said mechanical structure and etching said interlayer dielectric layer around said mechanical structure through said holes to form said cavity; and

(d) sealing said cavity by sealing said holes,

wherein said step (a), said step (b), said step (c) and said step (d) are performed by using a technology for forming an interconnect of a MOSFET,

wherein said step (c) includes the steps of;

(c1) forming a film having first holes and a second hole larger than said first holes therein on said interlayer dielectric;

(c2) forming said cavity by etching said interlayer dielectric around said mechanical structure through said first holes and said second hole;

(c3) filling said first holes with a dielectric while keeping said second hole open; and

(c4) removing said dielectric formed by said step (c3) on said mechanical structure,

wherein, in said step (d), said second hole is sealed.