Quantum dots of group IV semiconductor materials
First Claim
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1. A quantum dot comprising:
- a) a core that is crystalline and including Ge; and
b) a shell that is inorganic and noncrystalline and including GeOn with n between approximately 1.5 and 2, said shell surrounding said core and having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn,said quantum dot exhibits photoluminescence with a quantum efficiency that is at least 40 percent.
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Abstract
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.
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8 Claims
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1. A quantum dot comprising:
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a) a core that is crystalline and including Ge; and b) a shell that is inorganic and noncrystalline and including GeOn with n between approximately 1.5 and 2, said shell surrounding said core and having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn, said quantum dot exhibits photoluminescence with a quantum efficiency that is at least 40 percent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification