Methods of fabrication of wafer-level vacuum packaged devices

• US 7,402,905 B2
• Filed: 08/07/2006
• Issued: 07/22/2008
• Est. Priority Date: 08/07/2006
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Jafri, Ijaz H., Eskridge, Mark H.
• Primary Examiner(s): Wilczewski; M.
• Assistant Examiner(s): Patton; Paul E
• Application Number:
  US11/462,767
• Publication Number:
  US 20080029863A1
• Time in Patent Office: 715 Days
• Field of Search: 257/680, 257/682, 257/685, 257/686, 257/687, 257/690, 257/693, 257/701, 257/702, 257/E23.003, 257/E23.009, 257/E23.011, 257/E23.116, 257/117, 257/118, 257/E23.18, 438125-127
• US Class Current: 257/702
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2203/031 Anodic bondings

Abstract

An hermetic, gas filled or vacuum package device and method of making a vacuum package device. The device includes a device layer having one or more Micro Electro-Mechanical Systems (MEMS) devices. The device layer includes one or more electrical leads coupled to the one or more MEMS devices. The device also includes a first wafer having one or more silicon pins, wherein a first surface of the first wafer is bonded to a first surface of the device layer in such a manner that the one or more silicon pins are in electrical communication with the electrical leads. A second wafer, which may also have one or more silicon pins, is bonded to a second surface of the device layer. The first and second wafers are formed of borosilicate glass and the device layer is formed of silicon.

Claims

1. A hermetically sealed device comprising:

a device layer comprising one or more Micro Electro-Mechanical Systems (MEMS) devices, the device layer having a first surface and a second surface, the MEMs devices having a first electrical lead and a second electrical lead;

a first wafer includes borosilicate glass, the first wafer having a first surface and a second surface and a silicon in extending from the first surface to the second surface, wherein the first surface of the first wafer is bonded to the first surface of the device layer such that the silicon pin of the first wafer is in electrical communication with the first electrical lead of at least one MEMS device; and

a second wafer having a first surface and a second surface and a silicon pin extending from the first surface to the second surface, wherein the first surface of the second wafer is bonded to the second surface of the device layer such that the silicon pin of the second wafer is in electrical communication with the second electrical lead of at least one MEMS device.

2. The device of claim 1, wherein the first and second wafers include one or more troughs forming one or more cavities to contain one or more MEMS devices.

3. The device of claim 2, further comprising a getter material deposited within one or more of the cavities.

4. The device of claim 3, wherein the getter material is deposited in one or both of the first and second wafers'"'"' troughs prior to bonding the wafers to the device layer and the getter material being activated using a heating process.

5. A method of making a vacuum package device, the method comprising:

forming one or more Micro Electro-Mechanical Systems (MEMS) devices in a device layer;

forming a first wafer having a silicon pin therethrough and one or more electrical leads coupled to the silicon pin;

bonding the first wafer to a first surface of the device layer in such a manner that the silicon pin of the first wafer is in electrical communication with portions of the device layer; and

bonding a second wafer formed in a manner similar to the first wafer to a second surface of the device layer to form a seal, such that a silicon pin of the second wafer is in electrical communication with at least one portion of the device layer.

6. The method of claim 5, further comprising forming one or more troughs in the first and second wafers.

7. The method of claim 6, further comprising positioning the troughs over the one or more MEMS devices to form a cavity.

8. The method of claim 6, further comprising depositing a getter material within at least one of the troughs as required.

9. The method of claim 8, further comprising heating the getter material to an activation point.

10. The method of claim 5, wherein the first and second wafer includes Pyrex glass and the device wafer includes silicon.

11. The method of claim 5, wherein the second wafer includes first and second surfaces, the silicon pins extending from the first surface to the second surface.