Noble metal layer formation for copper film deposition

• US 7,404,985 B2
• Filed: 05/22/2003
• Issued: 07/29/2008
• Est. Priority Date: 06/04/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chang, Mei, Chen, Ling
• Primary Examiner(s): Meeks; Timothy
• Assistant Examiner(s): GAMBETTA, KELLY M
• Application Number:
  US10/443,648
• Publication Number:
  US 20050220998A1
• Time in Patent Office: 1,895 Days
• Field of Search: 427/248.1, 427/255.23, 427/255.7
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76874 for electroless plating

Abstract

A method of noble metal layer formation for high aspect ratio interconnect features is described. The noble metal layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a noble metal-containing precursor and a reducing gas on a substrate structure. The adsorbed noble metal-containing precursor reacts with the adsorbed reducing gas to form the noble metal layer on the substrate. Suitable noble metals may include, for example, palladium (Pd), platinum (Pt) cobalt (Co), nickel (Ni) and rhodium (Rh).

Claims

1. A method of forming an interconnect structure, comprising:

(a) providing a substrate structure to a process chamber;

wherein the substrate structure includes an insulating material layer having vias defined therethrough to a contact metal;

(b) forming a tungsten-containing barrier layer on the contact metal inside the vias;

(c) forming a cobalt metal layer on the tungsten-containing barrier layer using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles and wherein each cycle comprises establishing a flow of an inert gas in the process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a cobalt metal-containing precursor and a silane-containing reducing gas;

wherein the cobalt metal-containing precursor is selected from the group consisting of (cyclopentadienyl)(cyclohexadienyl) cobalt, (cyclobutadienyl)(cyclopentadienyl) cobalt, bis(cyclopentadienyl) cobalt, bis(methylcyclopentadienyl) cobalt, cyclopentadienyl(1,3-hexadienyl) cobalt, (cyclopentadienyl)(5-methylcyclopentadienyl) cobalt, and bis(ethylene) (pentamethylcyclopentadienyl) cobalt; and

(d) depositing a copper layer on the cobalt metal layer.

2. The method of claim 1 wherein the period of exposure to the noble metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the noble metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the noble metal-containing precursor each have the same duration.

3. The method of claim 1 wherein at least one of the period of exposure to the noble metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the noble metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the noble metal-containing precursor has a different duration.

4. The method of claim 1 wherein the period of exposure to the noble metal-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

5. The method of claim 1 wherein at least one period of exposure to the noble metal-containing precursor for one or more deposition cycle of the cyclical deposition process has a different duration.

6. The method of claim 1 wherein the period of exposure to the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

7. The method of claim 1 wherein at least one period of exposure to the reducing gas for one or more deposition cycle of the cyclical deposition process has a different duration.

8. The method of claim 1 wherein a period of flow of the inert gas between the period of exposure to the noble metal-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

9. The method of claim 1 wherein at least one period of flow of the inert gas between the period of exposure to the noble metal-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has a different duration.

10. The method of claim 1 wherein a period of flow of the inert gas between the period of exposure to the reducing gas and the noble metal-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

11. The method of claim 1 wherein at least one period of flow of the inert gas between the period of exposure to the reducing gas and the noble metal-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

12. The method of claim 1, wherein the reducing gas comprises one or more gases selected from the group consisting of silane and disilane.

13. The method of claim 1, wherein the thickness of the cobalt metal layer is less than about 100 Å

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